Next Article in Journal
Nanomagnetic Gene Transfection for Non-Viral Gene Delivery in NIH 3T3 Mouse Embryonic Fibroblasts
Next Article in Special Issue
Evaluation of Superficial and Dimensional Quality Features in Metallic Micro-Channels Manufactured by Micro-End-Milling
Previous Article in Journal
A Review on the Synthesis and Applications of Mesostructured Transition Metal Phosphates
Previous Article in Special Issue
A Novel Fractional Order Model for the Dynamic Hysteresis of Piezoelectrically Actuated Fast Tool Servo
Materials 2013, 6(1), 244-254; doi:10.3390/ma6010244

Modeling the Microstructure Curvature of Boron-Doped Silicon in Bulk Micromachined Accelerometer

1,* , 1
1 School of Mechatronics Engineering, University of Electronic Technology and Science of China, Chengdu 611731, China 2 Institute of Electronic Engineering, China Academy of Engineering Physics, Mianyang 621900, China
* Author to whom correspondence should be addressed.
Received: 27 August 2012 / Revised: 29 December 2012 / Accepted: 7 January 2013 / Published: 15 January 2013
(This article belongs to the Special Issue Advances in Microelectromechanical Systems (MEMS) Materials)
View Full-Text   |   Download PDF [211 KB, uploaded 15 January 2013]   |   Browse Figures


Microstructure curvature, or buckling, is observed in the micromachining of silicon sensors because of the doping of impurities for realizing certain electrical and mechanical processes. This behavior can be a key source of error in inertial sensors. Therefore, identifying the factors that influence the buckling value is important in designing MEMS devices. In this study, the curvature in the proof mass of an accelerometer is modeled as a multilayered solid model. Modeling is performed according to the characteristics of the solid diffusion mechanism in the bulk-dissolved wafer process (BDWP) based on the self-stopped etch technique. Moreover, the proposed multilayered solid model is established as an equivalent composite structure formed by a group of thin layers that are glued together. Each layer has a different Young’s modulus value and each undergoes different volume shrinkage strain owing to boron doping in silicon. Observations of five groups of proof mass blocks of accelerometers suggest that the theoretical model is effective in determining the buckling value of a fabricated structure.
Keywords: microstructure; boron-doped silicon; multilayer solid model; curvature microstructure; boron-doped silicon; multilayer solid model; curvature
This is an open access article distributed under the Creative Commons Attribution License (CC BY) which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Share & Cite This Article

Further Mendeley | CiteULike
Export to BibTeX |
EndNote |
MDPI and ACS Style

Zhou, W.; Yu, H.; Peng, B.; Shen, H.; He, X.; Su, W. Modeling the Microstructure Curvature of Boron-Doped Silicon in Bulk Micromachined Accelerometer. Materials 2013, 6, 244-254.

View more citation formats

Related Articles

Article Metrics

For more information on the journal, click here


[Return to top]
Materials EISSN 1996-1944 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert