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Materials 2012, 5(3), 364-376; doi:10.3390/ma5030364
Article
X-ray Photoelectron Spectroscopy (XPS) Depth Profiling for Evaluation of La2Zr2O7 Buffer Layer Capacity
Sol-Gel Centre for Research on Inorganic Powders and Thin Film Synthesis SCRiPTS, Department of Inorganic and Physical Chemistry, Ghent University, Krijgslaan 281-S3, Gent B-9000, Belgium
* Author to whom correspondence should be addressed.
Received: 1 February 2012 / Accepted: 21 February 2012 / Published: 27 February 2012
Abstract: Lanthanum zirconate (LZO) films from water-based precursors were deposited on Ni-5%W tape by chemical solution deposition. The buffer capacity of these layers includes the prevention of Ni oxidation of the substrate and Ni penetration towards the YBCO film which is detrimental for the superconducting properties. X-ray Photoelectron Spectroscopy depth profiling was used to study the barrier efficiency before and after an additional oxygen annealing step, which simulates the thermal treatment for YBCO thin film synthesis. Measurements revealed that the thermal treatment in presence of oxygen could severely increase Ni diffusion. Nonetheless it was shown that from the water-based precursors’ buffer layers with sufficient barrier capacity towards Ni penetration could be synthesized if the layers meet a certain critical thickness and density.
Keywords: coated conductor; chemical solution deposition; buffer layers; depth profile; X-ray photoelectron spectroscopy
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MDPI and ACS Style
Narayanan, V.; de Buysser, K.; Bruneel, E.; Driessche, I. X-ray Photoelectron Spectroscopy (XPS) Depth Profiling for Evaluation of La2Zr2O7 Buffer Layer Capacity. Materials 2012, 5, 364-376.
AMA StyleNarayanan V, de Buysser K, Bruneel E, Driessche I. X-ray Photoelectron Spectroscopy (XPS) Depth Profiling for Evaluation of La2Zr2O7 Buffer Layer Capacity. Materials. 2012; 5(3):364-376.
Chicago/Turabian StyleNarayanan, Vyshnavi; de Buysser, Klaartje; Bruneel, Els; Driessche, Isabel van. 2012. "X-ray Photoelectron Spectroscopy (XPS) Depth Profiling for Evaluation of La2Zr2O7 Buffer Layer Capacity." Materials 5, no. 3: 364-376.
Materials
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