Next Article in Journal
Dispersion of Pt Nanoparticle-Doped Reduced Graphene Oxide Using Aniline as a Stabilizer
Previous Article in Journal
Preparation, Characterization and Release of Urea from Wheat Gluten Electrospun Membranes
Article Menu

Article Versions

Export Article

Open AccessArticle
Materials 2012, 5(12), 2917-2926; doi:10.3390/ma5122917

Optimization of the GaAs-on-Si Substrate for Microelectromechanical Systems (MEMS) Sensor Application

1
Key Laboratory of Instrumentation Science & Dynamic Measurement Ministry of Education, Taiyuan, Shanxi 030051, China
2
State Key Laboratory for Superlattices and Microstructures, Institute of semiconductors, Chinese Academy of Sciences, Beijing 100083, China
3
School of Mechatronic Engineering, Beijing Institute of Technology, 100081, China
*
Author to whom correspondence should be addressed.
Received: 24 October 2012 / Revised: 4 December 2012 / Accepted: 10 December 2012 / Published: 17 December 2012
View Full-Text   |   Download PDF [1260 KB, uploaded 18 December 2012]   |  

Abstract

Resonant Tunneling Diodes (RTD) and High Electron Mobility Transistor (HEMT) based on GaAs, as the piezoresistive sensing element, exhibit extremely high sensitivity in the MEMS sensors based on GaAs. To further expand their applications to the fields of MEMS sensors based on Si, we have studied the optimization of the GaAs epitaxy layers on Si wafers. Matching superlattice and strain superlattice were used, and the surface defect density can be improved by two orders of magnitude. Combing with the Raman spectrum, the residual stress was characterized, and it can be concluded from the experimental results that the residual stress can be reduced by 50%, in comparison with the original substrate. This method gives us a solution to optimize the epitaxy GaAs layers on Si substrate, which will also optimize our future process of integration RTD and HEMT based on GaAs on Si substrate for the MEMS sensor applications. View Full-Text
Keywords: residual stress; GaAs-on-Si; MEMS sensors residual stress; GaAs-on-Si; MEMS sensors
This is an open access article distributed under the Creative Commons Attribution License (CC BY 3.0).

Scifeed alert for new publications

Never miss any articles matching your research from any publisher
  • Get alerts for new papers matching your research
  • Find out the new papers from selected authors
  • Updated daily for 49'000+ journals and 6000+ publishers
  • Define your Scifeed now

SciFeed Share & Cite This Article

MDPI and ACS Style

Shi, Y.; Guo, H.; Ni, H.; Xue, C.; Niu, Z.; Tang, J.; Liu, J.; Zhang, W.; He, J.; Li, M.; Yu, Y. Optimization of the GaAs-on-Si Substrate for Microelectromechanical Systems (MEMS) Sensor Application. Materials 2012, 5, 2917-2926.

Show more citation formats Show less citations formats

Related Articles

Article Metrics

Article Access Statistics

1

Comments

[Return to top]
Materials EISSN 1996-1944 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert
Back to Top