Materials 2010, 3(5), 3006-3076; doi:10.3390/ma3053006

Macroporous Semiconductors

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Received: 19 February 2010; in revised form: 30 March 2010 / Accepted: 30 April 2010 / Published: 7 May 2010
(This article belongs to the Special Issue Porous Materials)
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
Abstract: Pores in single crystalline semiconductors come in many forms (e.g., pore sizes from 2 nm to > 10 µm; morphologies from perfect pore crystal to fractal) and exhibit many unique properties directly or as nanocompounds if the pores are filled. The various kinds of pores obtained in semiconductors like Ge, Si, III-V, and II-VI compound semiconductors are systematically reviewed, emphasizing macropores. Essentials of pore formation mechanisms will be discussed, focusing on differences and some open questions but in particular on common properties. Possible applications of porous semiconductors, including for example high explosives, high efficiency electrodes for Li ion batteries, drug delivery systems, solar cells, thermoelectric elements and many novel electronic, optical or sensor devices, will be introduced and discussed.
Keywords: porous semiconductors; macropores in semiconductors; electrochemistry of semiconductors; in situ impedance spectroscopy; applications of porous semiconductors; modeling of pore formation
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MDPI and ACS Style

Föll, H.; Leisner, M.; Cojocaru, A.; Carstensen, J. Macroporous Semiconductors. Materials 2010, 3, 3006-3076.

AMA Style

Föll H, Leisner M, Cojocaru A, Carstensen J. Macroporous Semiconductors. Materials. 2010; 3(5):3006-3076.

Chicago/Turabian Style

Föll, Helmut; Leisner, Malte; Cojocaru, Ala; Carstensen, Jürgen. 2010. "Macroporous Semiconductors." Materials 3, no. 5: 3006-3076.

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