Materials 2010, 3(4), 2567-2587; doi:10.3390/ma3042567
Review

Novel Materials through Non-Hydrolytic Sol-Gel Processing: Negative Thermal Expansion Oxides and Beyond

Cora Lind 1,* email, Stacy D. Gates 2 email, Nathalie M. Pedoussaut 3 email and Tamam I. Baiz 1 email
1 Department of Chemistry, The University of Toledo, Toledo, OH 43606, USA 2 14841 Hubbell Road, Detroit, MI 48227, USA 3 Canoio, 31530 Bretx, France
* Author to whom correspondence should be addressed.
Received: 11 January 2010; in revised form: 9 March 2010 / Accepted: 2 April 2010 / Published: 6 April 2010
(This article belongs to the Special Issue Sol-Gel Technique)
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Abstract: Low temperature methods have been applied to the synthesis of many advanced materials. Non-hydrolytic sol-gel (NHSG) processes offer an elegant route to stable and metastable phases at low temperatures. Excellent atomic level homogeneity gives access to polymorphs that are difficult or impossible to obtain by other methods. The NHSG approach is most commonly applied to the preparation of metal oxides, but can be easily extended to metal sulfides. Exploration of experimental variables allows control over product stoichiometry and crystal structure. This paper reviews the application of NHSG chemistry to the synthesis of negative thermal expansion oxides and selected metal sulfides.
Keywords: non-hydrolytic sol-gel; metal oxides; negative thermal expansion; metal sulfides

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MDPI and ACS Style

Lind, C.; Gates, S.D.; Pedoussaut, N.M.; Baiz, T.I. Novel Materials through Non-Hydrolytic Sol-Gel Processing: Negative Thermal Expansion Oxides and Beyond. Materials 2010, 3, 2567-2587.

AMA Style

Lind C, Gates SD, Pedoussaut NM, Baiz TI. Novel Materials through Non-Hydrolytic Sol-Gel Processing: Negative Thermal Expansion Oxides and Beyond. Materials. 2010; 3(4):2567-2587.

Chicago/Turabian Style

Lind, Cora; Gates, Stacy D.; Pedoussaut, Nathalie M.; Baiz, Tamam I. 2010. "Novel Materials through Non-Hydrolytic Sol-Gel Processing: Negative Thermal Expansion Oxides and Beyond." Materials 3, no. 4: 2567-2587.

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