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Materials 2010, 3(4), 2218-2259; doi:10.3390/ma3042218

Fabrication Methods and Luminescent Properties of ZnO Materials for Light-Emitting Diodes

Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan
Received: 15 January 2010 / Revised: 8 February 2010 / Accepted: 19 March 2010 / Published: 24 March 2010
(This article belongs to the Special Issue Luminescent Materials)

Abstract

Zinc oxide (ZnO) is a potential candidate material for optoelectronic applications, especially for blue to ultraviolet light emitting devices, due to its fundamental advantages, such as direct wide band gap of 3.37 eV, large exciton binding energy of 60 meV, and high optical gain of 320 cm−1 at room temperature. Its luminescent properties have been intensively investigated for samples, in the form of bulk, thin film, or nanostructure, prepared by various methods and doped with different impurities. In this paper, we first review briefly the recent progress in this field. Then a comprehensive summary of the research carried out in our laboratory on ZnO preparation and its luminescent properties, will be presented, in which the involved samples include ZnO films and nanorods prepared with different methods and doped with n-type or p-type impurities. The results of ZnO based LEDs will also be discussed. View Full-Text
Keywords: ZnO thin film; fabrication methods; luminescent properties; defect states; conductive types; nanostructured ZnO; light-emitting diodes ZnO thin film; fabrication methods; luminescent properties; defect states; conductive types; nanostructured ZnO; light-emitting diodes
This is an open access article distributed under the Creative Commons Attribution License (CC BY 3.0).

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Lee, C.-T. Fabrication Methods and Luminescent Properties of ZnO Materials for Light-Emitting Diodes. Materials 2010, 3, 2218-2259.

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