Next Article in Journal
Next Article in Special Issue
Previous Article in Journal
Previous Article in Special Issue
Materials 2010, 3(4), 2218-2259; doi:10.3390/ma3042218
Article

Fabrication Methods and Luminescent Properties of ZnO Materials for Light-Emitting Diodes

Received: 15 January 2010; in revised form: 8 February 2010 / Accepted: 19 March 2010 / Published: 24 March 2010
(This article belongs to the Special Issue Luminescent Materials)
Download PDF [1443 KB, uploaded 24 March 2010]
Abstract: Zinc oxide (ZnO) is a potential candidate material for optoelectronic applications, especially for blue to ultraviolet light emitting devices, due to its fundamental advantages, such as direct wide band gap of 3.37 eV, large exciton binding energy of 60 meV, and high optical gain of 320 cm−1 at room temperature. Its luminescent properties have been intensively investigated for samples, in the form of bulk, thin film, or nanostructure, prepared by various methods and doped with different impurities. In this paper, we first review briefly the recent progress in this field. Then a comprehensive summary of the research carried out in our laboratory on ZnO preparation and its luminescent properties, will be presented, in which the involved samples include ZnO films and nanorods prepared with different methods and doped with n-type or p-type impurities. The results of ZnO based LEDs will also be discussed.
Keywords: ZnO thin film; fabrication methods; luminescent properties; defect states; conductive types; nanostructured ZnO; light-emitting diodes ZnO thin film; fabrication methods; luminescent properties; defect states; conductive types; nanostructured ZnO; light-emitting diodes
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Export to BibTeX |
EndNote


MDPI and ACS Style

Lee, C.-T. Fabrication Methods and Luminescent Properties of ZnO Materials for Light-Emitting Diodes. Materials 2010, 3, 2218-2259.

AMA Style

Lee C-T. Fabrication Methods and Luminescent Properties of ZnO Materials for Light-Emitting Diodes. Materials. 2010; 3(4):2218-2259.

Chicago/Turabian Style

Lee, Ching-Ting. 2010. "Fabrication Methods and Luminescent Properties of ZnO Materials for Light-Emitting Diodes." Materials 3, no. 4: 2218-2259.


Materials EISSN 1996-1944 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert