Materials 2010, 3(3), 1533-1558; doi:10.3390/ma3031533
Review

Azine- and Azole-Functionalized Oligo´ and Polythiophene Semiconductors for Organic Thin-Film Transistors

Rocío Ponce Ortiz 1,* email, He Yan 2 email, Antonio Facchetti 1,2 email and Tobin J. Marks 1,* email
1 Department of Chemistry, Northwestern University, 2145 Sheridan Road, Evanston, Illinois, 60208, USA 2 Polyera Corporation, 8045 Lamon Avenue, Skokie, Illinois, 60077, USA
* Authors to whom correspondence should be addressed.
Received: 1 February 2010; in revised form: 26 February 2010 / Accepted: 1 March 2010 / Published: 3 March 2010
(This article belongs to the Special Issue Organic Electronic Materials)
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Abstract: In the organic electronics research field, several strategies have been used to modulate the transport properties of thiophene-derived semiconductors via sequential functionalization of their π-conjugated cores. This review summarizes the major design and synthetic strategies for tuning thiophene-containing small molecule and polymer properties by introducing electron-deficient nitrogen-containing azine and azole moieties. Several examples are presented which elucidate the structural, optical, and electronic consequences of incorporating these electron-deficient fragments in the conjugated skeletons, particularly relating to applications in organic thin-film transistors.
Keywords: azine; azole; thiophene; organic field-effect transistors

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MDPI and ACS Style

Ortiz, R.P.; Yan, H.; Facchetti, A.; Marks, T.J. Azine- and Azole-Functionalized Oligo´ and Polythiophene Semiconductors for Organic Thin-Film Transistors. Materials 2010, 3, 1533-1558.

AMA Style

Ortiz RP, Yan H, Facchetti A, Marks TJ. Azine- and Azole-Functionalized Oligo´ and Polythiophene Semiconductors for Organic Thin-Film Transistors. Materials. 2010; 3(3):1533-1558.

Chicago/Turabian Style

Ortiz, Rocío Ponce; Yan, He; Facchetti, Antonio; Marks, Tobin J. 2010. "Azine- and Azole-Functionalized Oligo´ and Polythiophene Semiconductors for Organic Thin-Film Transistors." Materials 3, no. 3: 1533-1558.

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