Materials 2010, 3(3), 1497-1508; doi:10.3390/ma3031497
Article

Photoluminescence and Band Alignment of Strained GaAsSb/GaAs QW Structures Grown by MBE on GaAs

Received: 1 January 2010; in revised form: 24 February 2010 / Accepted: 24 February 2010 / Published: 26 February 2010
(This article belongs to the Special Issue Luminescent Materials)
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
Abstract: An in-depth optimization of growth conditions and investigation of optical properties including discussions on band alignment of GaAsSb/GaAs quantum well (QW) on GaAs by molecular beam epitaxy (MBE) are reported. Optimal MBE growth temperature of GaAsSb QW is found to be 470 ± 10 °C. GaAsSb/GaAs QW with Sb content ~0.36 has a weak type-II band alignment with valence band offset ratio QV ~1.06. A full width at half maximum (FWHM) of ~60 meV in room temperature (RT) photoluminescence (PL) indicates fluctuation in electrostatic potential to be less than 20 meV. Samples grown under optimal conditions do not exhibit any blue shift of peak in RT PL spectra under varying excitation.
Keywords: molecular beam epitaxy; quantum wells; antimonide; laser diodes
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MDPI and ACS Style

Sadofyev, Y.G.; Samal, N. Photoluminescence and Band Alignment of Strained GaAsSb/GaAs QW Structures Grown by MBE on GaAs. Materials 2010, 3, 1497-1508.

AMA Style

Sadofyev YG, Samal N. Photoluminescence and Band Alignment of Strained GaAsSb/GaAs QW Structures Grown by MBE on GaAs. Materials. 2010; 3(3):1497-1508.

Chicago/Turabian Style

Sadofyev, Yuri G.; Samal, Nigamananda. 2010. "Photoluminescence and Band Alignment of Strained GaAsSb/GaAs QW Structures Grown by MBE on GaAs." Materials 3, no. 3: 1497-1508.

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