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Materials 2009, 2(2), 699-709; doi:10.3390/ma2020699
Article

Optimization of the Adhesion Strength of Arc Ion Plating TiAlN Films by the Taguchi Method

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Received: 7 June 2009; Accepted: 17 June 2009 / Published: 17 June 2009
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Abstract: A three-level six-factor (arc power, substrate temperature, pre-treatment bias voltage, working pressure, deposition bias voltage and pretreatment time) orthogonal experimental array (L18) to optimize the adhesion strength of arc ion plating (AIP) TiAlN films was designed using the Taguchi method. An optimized film process, namely substrate temperature 220 °C, arc power 60 A, negative bias voltage -800 V, nitrogen pressure 10-2 Torr, pretreated voltage -450 V and pretreated time 15 minutes was obtained by the Taguchi program for the purpose of obtaining a larger critical load. The critical load of the optimized TiAlN film (53 N) was increased by 43% compared to the film with the highest critical load before optimization. The improvement in the adhesion strength of the films was attributed to the enhancement of hardness and the competitive growth of the (111), (200) and (220) orientations in the film.
Keywords: arc ion plating; TiAlN; adhesion strength; Taguchi method arc ion plating; TiAlN; adhesion strength; Taguchi method
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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MDPI and ACS Style

Joo, Y.-K.; Zhang, S.-H.; Yoon, J.-H.; Cho, T.-Y. Optimization of the Adhesion Strength of Arc Ion Plating TiAlN Films by the Taguchi Method. Materials 2009, 2, 699-709.

AMA Style

Joo Y-K, Zhang S-H, Yoon J-H, Cho T-Y. Optimization of the Adhesion Strength of Arc Ion Plating TiAlN Films by the Taguchi Method. Materials. 2009; 2(2):699-709.

Chicago/Turabian Style

Joo, Yun-Kon; Zhang, Shi-Hong; Yoon, Jae-Hong; Cho, Tong-Yul. 2009. "Optimization of the Adhesion Strength of Arc Ion Plating TiAlN Films by the Taguchi Method." Materials 2, no. 2: 699-709.


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