Next Article in Journal
Fabrication and Characterization of an Electrospun PHA/Graphene Silver Nanocomposite Scaffold for Antibacterial Applications
Previous Article in Journal
Correlating Synthesis Parameters to Morphological Entities: Predictive Modeling of Biopolymer Aerogels
Article Menu
Issue 9 (September) cover image

Export Article

Open AccessArticle
Materials 2018, 11(9), 1672; https://doi.org/10.3390/ma11091672

Ge2Sb2Te5 p-Type Thin-Film Transistors on Flexible Plastic Foil

Electronics Laboratory, Department of Information Technology and Electrical Engineering, 8092 Zürich, Switzerland
*
Author to whom correspondence should be addressed.
Received: 27 July 2018 / Revised: 26 August 2018 / Accepted: 7 September 2018 / Published: 9 September 2018
(This article belongs to the Section Thin Films)
Full-Text   |   PDF [3186 KB, uploaded 10 September 2018]   |  

Abstract

In this work, we show the performance improvement of p-type thin-film transistors (TFTs) with Ge 2 Sb 2 Te 5 (GST) semiconductor layers on flexible polyimide substrates, achieved by downscaling of the GST thickness. Prior works on GST TFTs have typically shown poor current modulation capabilities with ON/OFF ratios ≤20 and non-saturating output characteristics. By reducing the GST thickness to 5 nm, we achieve ON/OFF ratios up to ≈300 and a channel pinch-off leading to drain current saturation. We compare the GST TFTs in their amorphous (as deposited) state and in their crystalline (annealed at 200 °C) state. The highest effective field-effect mobility of 6.7 cm 2 /Vs is achieved for 10-nm-thick crystalline GST TFTs, which have an ON/OFF ratio of ≈16. The highest effective field-effect mobility in amorphous GST TFTs is 0.04 cm 2 /Vs, which is obtained in devices with a GST thickness of 5 nm. The devices remain fully operational upon bending to a radius of 6 mm. Furthermore, we find that the TFTs with amorphous channels are more sensitive to bias stress than the ones with crystallized channels. These results show that GST semiconductors are compatible with flexible electronics technology, where high-performance p-type TFTs are strongly needed for the realization of hybrid complementary metal-oxide-semiconductor (CMOS) technology in conjunction with popular n-type oxide semiconductor materials. View Full-Text
Keywords: GST; thin-film transistor; flexible electronics; P-type semiconductor; crystalline materials; amorphous materials; phase-change materials; germanium; antimony; tellurium GST; thin-film transistor; flexible electronics; P-type semiconductor; crystalline materials; amorphous materials; phase-change materials; germanium; antimony; tellurium
Figures

Figure 1

This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).
SciFeed

Share & Cite This Article

MDPI and ACS Style

Daus, A.; Han, S.; Knobelspies, S.; Cantarella, G.; Tröster, G. Ge2Sb2Te5 p-Type Thin-Film Transistors on Flexible Plastic Foil. Materials 2018, 11, 1672.

Show more citation formats Show less citations formats

Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Related Articles

Article Metrics

Article Access Statistics

1

Comments

[Return to top]
Materials EISSN 1996-1944 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert
Back to Top