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Materials 2018, 11(5), 743; https://doi.org/10.3390/ma11050743

Optoelectronic Performance Variations in InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes: Effects of Potential Fluctuation

1
Department of Electronics and Communication Engineering, Hanyang University ERICA, Ansan 15588, Korea
2
Department of Photonics and Nanoelectronics and Department of Bionanotechnology, Hanyang University ERICA, Ansan 15588, Korea
*
Author to whom correspondence should be addressed.
Received: 11 April 2018 / Revised: 2 May 2018 / Accepted: 3 May 2018 / Published: 7 May 2018
(This article belongs to the Special Issue Light Emitting Diodes and Laser Diodes: Materials and Devices)
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Abstract

We investigate the cause of the optoelectronic performance variations in InGaN/GaN multiple-quantum-well blue light-emitting diodes, using three different samples from an identical wafer grown on a c-plane sapphire substrate. Various macroscopic measurements have been conducted, revealing that with increasing strain in the quantum wells (QWs), the crystal quality improves with an increasing peak internal quantum efficiency while the droop becomes more severe. We propose to explain these variations using a model where the in-plane local potential fluctuation in QWs is considered. Our work is contrasted with prior works in that macroscopic measurements are utilized to find clues on the microscopic changes and their impacts on the device performances, which has been rarely attempted. View Full-Text
Keywords: light-emitting diodes; strain; piezoelectric field; point defects; potential fluctuation; carrier localization light-emitting diodes; strain; piezoelectric field; point defects; potential fluctuation; carrier localization
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).
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Islam, A.B.M.H.; Shim, J.-I.; Shin, D.-S. Optoelectronic Performance Variations in InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes: Effects of Potential Fluctuation. Materials 2018, 11, 743.

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