Next Article in Journal
Facile Preparation of Nano-Bi2MoO6/Diatomite Composite for Enhancing Photocatalytic Performance under Visible Light Irradiation
Previous Article in Journal
The Influence of the Heat-Affected Zone Mechanical Properties on the Behaviour of the Welding in Transverse Plate-to-Tube Joints
Article Menu

Export Article

Open AccessArticle
Materials 2018, 11(2), 265; doi:10.3390/ma11020265

Impact of Electrode Surface Morphology in ZnO-Based Resistive Random Access Memory Fabricated Using the Cu Chemical Displacement Technique

1
Department of Electronic Engineering, Feng Chia University, Taichung 40724, Taiwan
2
Department of Electronic Engineering, National Chin-Yi University of Technology, Taichung 41170, Taiwan
3
Department of Electronic Engineering, National United University, Miaoli 36003, Taiwan
*
Author to whom correspondence should be addressed.
Received: 11 January 2018 / Revised: 31 January 2018 / Accepted: 8 February 2018 / Published: 9 February 2018
(This article belongs to the Section Thin Films)
View Full-Text   |   Download PDF [4752 KB, uploaded 9 February 2018]   |  

Abstract

Electrochemical-metallization-type resistive random access memories (ReRAMs) show promising performance as next-generation nonvolatile memory. In this paper, the Cu chemical displacement technique (CDT) is used to form the bottom electrode of ReRAM devices. Compared with conventional deposition methods, the Cu-CDT method has numerous advantages for ReRAM fabrication, including low cost, low temperature fabrication, and the provision of unconsolidated Cu film and large surface roughness. Moreover, the Cu-CDT method is a favorable candidate for overcoming the Cu etching problem and is thus suitable for fabricating ReRAM devices. Using this technique, the surface morphology of a thin Cu film can be easily controlled. The obtained results show that the electric fields during the Forming and SET operations decreased, and the on-state current increased in the RESET operation, as the Cu-CDT displacement time was increased. The Cu-CDT samples exhibited a low operation field, large memory window (>106), and excellent endurance switching cycle characteristics. Moreover, this paper proposes a model to explain the electrical characteristics of ReRAM, which are dependent on the surface morphology. View Full-Text
Keywords: ECM; resistive memory; ReRAM; chemical displacement; Cu-CDT ECM; resistive memory; ReRAM; chemical displacement; Cu-CDT
Figures

Figure 1

This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

Scifeed alert for new publications

Never miss any articles matching your research from any publisher
  • Get alerts for new papers matching your research
  • Find out the new papers from selected authors
  • Updated daily for 49'000+ journals and 6000+ publishers
  • Define your Scifeed now

SciFeed Share & Cite This Article

MDPI and ACS Style

Wu, C.-C.; You, H.-C.; Lin, Y.-H.; Yang, C.-J.; Hsiao, Y.-P.; Liao, T.-P.; Yang, W.-L. Impact of Electrode Surface Morphology in ZnO-Based Resistive Random Access Memory Fabricated Using the Cu Chemical Displacement Technique. Materials 2018, 11, 265.

Show more citation formats Show less citations formats

Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Related Articles

Article Metrics

Article Access Statistics

1

Comments

[Return to top]
Materials EISSN 1996-1944 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert
Back to Top