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Materials 2017, 10(7), 742; doi:10.3390/ma10070742

Investigation of Rapid Low-Power Microwave-Induction Heating Scheme on the Cross-Linking Process of the Poly(4-vinylphenol) for the Gate Insulator of Pentacene-Based Thin-Film Transistors

1
Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, 43 Sec. 4, Keelung Road, Taipei 106, Taiwan
2
Department of Electronic Engineering, National Taiwan University of Science and Technology, 43 Sec. 4, Keelung Road, Taipei 106, Taiwan
3
Institute of Materials Science and Engineering, National Taipei University of Technology, Taipei 106, Taiwan
4
Department of Electrical Engineering, Lee-Ming Institute of Technology, New Taipei 243, Taiwan
*
Author to whom correspondence should be addressed.
Received: 29 March 2017 / Revised: 6 June 2017 / Accepted: 20 June 2017 / Published: 3 July 2017
(This article belongs to the Special Issue Stretchable and Flexible Electronic Materials & Devices)
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Abstract

In this study, a proposed Microwave-Induction Heating (MIH) scheme has been systematically studied to acquire suitable MIH parameters including chamber pressure, microwave power and heating time. The proposed MIH means that the thin indium tin oxide (ITO) metal below the Poly(4-vinylphenol) (PVP) film is heated rapidly by microwave irradiation and the heated ITO metal gate can heat the PVP gate insulator, resulting in PVP cross-linking. It is found that the attenuation of the microwave energy decreases with the decreasing chamber pressure. The optimal conditions are a power of 50 W, a heating time of 5 min, and a chamber pressure of 20 mTorr. When suitable MIH parameters were used, the effect of PVP cross-linking and the device performance were similar to those obtained using traditional oven heating, even though the cross-linking time was significantly decreased from 1 h to 5 min. Besides the gate leakage current, the interface trap state density (Nit) was also calculated to describe the interface status between the gate insulator and the active layer. The lowest interface trap state density can be found in the device with the PVP gate insulator cross-linked by using the optimal MIH condition. Therefore, it is believed that the MIH scheme is a good candidate to cross-link the PVP gate insulator for organic thin-film transistor applications as a result of its features of rapid heating (5 min) and low-power microwave-irradiation (50 W). View Full-Text
Keywords: organic thin-film transistor; pentacene; PVP; microwave; cross-linking; Microwave-Induction Heating (MIH) organic thin-film transistor; pentacene; PVP; microwave; cross-linking; Microwave-Induction Heating (MIH)
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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MDPI and ACS Style

Fan, C.-L.; Shang, M.-C.; Wang, S.-J.; Hsia, M.-Y.; Lee, W.-D.; Huang, B.-R. Investigation of Rapid Low-Power Microwave-Induction Heating Scheme on the Cross-Linking Process of the Poly(4-vinylphenol) for the Gate Insulator of Pentacene-Based Thin-Film Transistors. Materials 2017, 10, 742.

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