High Mobility Thin Film Transistors Based on Amorphous Indium Zinc Tin Oxide
AbstractTop-contact bottom-gate thin film transistors (TFTs) with zinc-rich indium zinc tin oxide (IZTO) active layer were prepared at room temperature by radio frequency magnetron sputtering. Sintered ceramic target was prepared and used for deposition from oxide powder mixture having the molar ratio of In2O3:ZnO:SnO2 = 2:5:1. Annealing treatment was carried out for as-deposited films at various temperatures to investigate its effect on TFT performances. It was found that annealing treatment at 350 °C for 30 min in air atmosphere yielded the best result, with the high field effect mobility value of 34 cm2/Vs and the minimum subthreshold swing value of 0.12 V/dec. All IZTO thin films were amorphous, even after annealing treatment of up to 350 °C. View Full-Text
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Noviyana, I.; Lestari, A.D.; Putri, M.; Won, M.-S.; Bae, J.-S.; Heo, Y.-W.; Lee, H.Y. High Mobility Thin Film Transistors Based on Amorphous Indium Zinc Tin Oxide. Materials 2017, 10, 702.
Noviyana I, Lestari AD, Putri M, Won M-S, Bae J-S, Heo Y-W, Lee HY. High Mobility Thin Film Transistors Based on Amorphous Indium Zinc Tin Oxide. Materials. 2017; 10(7):702.Chicago/Turabian Style
Noviyana, Imas; Lestari, Annisa Dwi; Putri, Maryane; Won, Mi-Sook; Bae, Jong-Seong; Heo, Young-Woo; Lee, Hee Young. 2017. "High Mobility Thin Film Transistors Based on Amorphous Indium Zinc Tin Oxide." Materials 10, no. 7: 702.