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Materials 2017, 10(7), 702; https://doi.org/10.3390/ma10070702

High Mobility Thin Film Transistors Based on Amorphous Indium Zinc Tin Oxide

1
School of Materials Science and Engineering, Yeungnam University, Gyeongsan 38541, Korea
2
Busan Center, Korea Basic Science Institute, Busan 46742, Korea
3
School of Materials Science and Engineering, Kyungpook National University, Daegu 41566, Korea
*
Author to whom correspondence should be addressed.
Received: 2 May 2017 / Revised: 21 June 2017 / Accepted: 21 June 2017 / Published: 26 June 2017
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Abstract

Top-contact bottom-gate thin film transistors (TFTs) with zinc-rich indium zinc tin oxide (IZTO) active layer were prepared at room temperature by radio frequency magnetron sputtering. Sintered ceramic target was prepared and used for deposition from oxide powder mixture having the molar ratio of In2O3:ZnO:SnO2 = 2:5:1. Annealing treatment was carried out for as-deposited films at various temperatures to investigate its effect on TFT performances. It was found that annealing treatment at 350 °C for 30 min in air atmosphere yielded the best result, with the high field effect mobility value of 34 cm2/Vs and the minimum subthreshold swing value of 0.12 V/dec. All IZTO thin films were amorphous, even after annealing treatment of up to 350 °C. View Full-Text
Keywords: amorphous oxide; thin film transistor; indium zinc tin oxide; RF magnetron sputtering; high field effect mobility amorphous oxide; thin film transistor; indium zinc tin oxide; RF magnetron sputtering; high field effect mobility
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).
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Noviyana, I.; Lestari, A.D.; Putri, M.; Won, M.-S.; Bae, J.-S.; Heo, Y.-W.; Lee, H.Y. High Mobility Thin Film Transistors Based on Amorphous Indium Zinc Tin Oxide. Materials 2017, 10, 702.

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