Next Article in Journal
Biosynthetic PCL-graft-Collagen Bulk Material for Tissue Engineering Applications
Next Article in Special Issue
Ion-Beam-Induced Atomic Mixing in Ge, Si, and SiGe, Studied by Means of Isotope Multilayer Structures
Previous Article in Journal
Preparation and Supercooling Modification of Salt Hydrate Phase Change Materials Based on CaCl2·2H2O/CaCl2
Previous Article in Special Issue
Evolution of Helium Bubbles and Discs in Irradiated 6H-SiC during Post-Implantation Annealing
Article Menu
Issue 7 (July) cover image

Export Article

Open AccessArticle
Materials 2017, 10(7), 690; doi:10.3390/ma10070690

Ion Beam Assisted Deposition of Thin Epitaxial GaN Films

1
Leibniz Institute of Surface Modification, Permoserstr. 15, 04318 Leipzig, Germany
2
Felix-Bloch Institute for Solid State Physics, Universität Leipzig, Linnéstraße 5, 04103 Leipzig, Germany
Now with MEA Engineering GmbH, 04109 Leipzig, Germany
Now with Fraunhofer Institute for Microstructure of Materials and Systems, 06120 Halle (Saale), Germany
*
Author to whom correspondence should be addressed.
Received: 12 May 2017 / Revised: 9 June 2017 / Accepted: 21 June 2017 / Published: 23 June 2017
(This article belongs to the Special Issue Ion Beam Analysis, Modification, and Irradiation of Materials)
View Full-Text   |   Download PDF [6593 KB, uploaded 23 June 2017]   |  

Abstract

The assistance of thin film deposition with low-energy ion bombardment influences their final properties significantly. Especially, the application of so-called hyperthermal ions (energy <100 eV) is capable to modify the characteristics of the growing film without generating a large number of irradiation induced defects. The nitrogen ion beam assisted molecular beam epitaxy (ion energy <25 eV) is used to deposit GaN thin films on (0001)-oriented 6H-SiC substrates at 700 °C. The films are studied in situ by reflection high energy electron diffraction, ex situ by X-ray diffraction, scanning tunnelling microscopy, and high-resolution transmission electron microscopy. It is demonstrated that the film growth mode can be controlled by varying the ion to atom ratio, where 2D films are characterized by a smooth topography, a high crystalline quality, low biaxial stress, and low defect density. Typical structural defects in the GaN thin films were identified as basal plane stacking faults, low-angle grain boundaries forming between w-GaN and z-GaN and twin boundaries. The misfit strain between the GaN thin films and substrates is relieved by the generation of edge dislocations in the first and second monolayers of GaN thin films and of misfit interfacial dislocations. It can be demonstrated that the low-energy nitrogen ion assisted molecular beam epitaxy is a technique to produce thin GaN films of high crystalline quality. View Full-Text
Keywords: ion beam assisted deposition; gallium nitride thin films; hyperthermal ions ion beam assisted deposition; gallium nitride thin films; hyperthermal ions
Figures

Figure 1

This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

Scifeed alert for new publications

Never miss any articles matching your research from any publisher
  • Get alerts for new papers matching your research
  • Find out the new papers from selected authors
  • Updated daily for 49'000+ journals and 6000+ publishers
  • Define your Scifeed now

SciFeed Share & Cite This Article

MDPI and ACS Style

Rauschenbach, B.; Lotnyk, A.; Neumann, L.; Poppitz, D.; Gerlach, J.W. Ion Beam Assisted Deposition of Thin Epitaxial GaN Films. Materials 2017, 10, 690.

Show more citation formats Show less citations formats

Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Related Articles

Article Metrics

Article Access Statistics

1

Comments

[Return to top]
Materials EISSN 1996-1944 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert
Back to Top