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Materials 2017, 10(6), 655; doi:10.3390/ma10060655

Microstructure and Dielectric Properties of LPCVD/CVI-SiBCN Ceramics Annealed at Different Temperatures

1
Science and Technology on Thermostructural Composite Materials Laboratory, Northwestern Polytechnical University, Xi’an 710072, China
2
State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi’an 710072, China
*
Author to whom correspondence should be addressed.
Academic Editor: Jérôme Chevalier
Received: 5 April 2017 / Revised: 2 June 2017 / Accepted: 7 June 2017 / Published: 15 June 2017
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Abstract

SiBCN ceramics were introduced into porous Si3N4 ceramics via a low-pressure chemical vapor deposition and infiltration (LPCVD/CVI) technique, and then the composite ceramics were heat-treated from 1400 °C to 1700 °C in a N2 atmosphere. The effects of annealing temperatures on microstructure, phase evolution, dielectric properties of SiBCN ceramics were investigated. The results revealed that α-Si3N4 and free carbon were separated below 1700 °C, and then SiC grains formed in the SiBCN ceramic matrix after annealing at 1700 °C through a phase-reaction between free carbon and α-Si3N4. The average dielectric loss of composites increased from 0 to 0.03 due to the formation of dispersive SiC grains and the increase of grain boundaries. View Full-Text
Keywords: siliconboron carbonitride ceramic; dielectric properties; electromagnetic wave absorbing properties; heat treatment; chemical vapor deposition and infiltration siliconboron carbonitride ceramic; dielectric properties; electromagnetic wave absorbing properties; heat treatment; chemical vapor deposition and infiltration
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Li, J.; Zhao, M.; Liu, Y.; Chai, N.; Ye, F.; Qin, H.; Cheng, L.; Zhang, L. Microstructure and Dielectric Properties of LPCVD/CVI-SiBCN Ceramics Annealed at Different Temperatures. Materials 2017, 10, 655.

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