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Materials 2017, 10(4), 446; doi:10.3390/ma10040446

Strong Photoluminescence Enhancement of Silicon Oxycarbide through Defect Engineering

Colleges of Nanoscale Science and Engineering, SUNY Polytechnic Institute, Albany, NY 12203, USA
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Academic Editor: Dirk Poelman
Received: 3 March 2017 / Revised: 1 April 2017 / Accepted: 18 April 2017 / Published: 23 April 2017
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Abstract

The following study focuses on the photoluminescence (PL) enhancement of chemically synthesized silicon oxycarbide (SiCxOy) thin films and nanowires through defect engineering via post-deposition passivation treatments. SiCxOy materials were deposited via thermal chemical vapor deposition (TCVD), and exhibit strong white light emission at room-temperature. Post-deposition passivation treatments were carried out using oxygen, nitrogen, and forming gas (FG, 5% H2, 95% N2) ambients, modifying the observed white light emission. The observed white luminescence was found to be inversely related to the carbonyl (C=O) bond density present in the films. The peak-to-peak PL was enhanced ~18 and ~17 times for, respectively, the two SiCxOy matrices, oxygen-rich and carbon-rich SiCxOy, via post-deposition passivations. Through a combinational and systematic Fourier transform infrared spectroscopy (FTIR) and PL study, it was revealed that proper tailoring of the passivations reduces the carbonyl bond density by a factor of ~2.2, corresponding to a PL enhancement of ~50 times. Furthermore, the temperature-dependent and temperature-dependent time resolved PL (TDPL and TD-TRPL) behaviors of the nitrogen and forming gas passivated SiCxOy thin films were investigated to acquire further insight into the ramifications of the passivation on the carbonyl/dangling bond density and PL yield. View Full-Text
Keywords: luminescent materials; nanowires; luminescence; spectroscopy; characterization; advanced techniques luminescent materials; nanowires; luminescence; spectroscopy; characterization; advanced techniques
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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MDPI and ACS Style

Ford, B.; Tabassum, N.; Nikas, V.; Gallis, S. Strong Photoluminescence Enhancement of Silicon Oxycarbide through Defect Engineering. Materials 2017, 10, 446.

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