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Materials 2017, 10(4), 351; doi:10.3390/ma10040351

Crystallinity and Sub-Band Gap Absorption of Femtosecond-Laser Hyperdoped Silicon Formed in Different N-Containing Gas Mixtures

1
Collaborative Innovation Center of Advanced Microstructures, State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
2
Department of Optical Science and Engineering, Fudan University, Shanghai 200433, China
3
Spectrophotometry Laboratory, National Institute of Metrology, Beijing 100013, China
*
Authors to whom correspondence should be addressed.
Academic Editor: Martin Byung-Guk Jun
Received: 9 February 2017 / Revised: 20 March 2017 / Accepted: 24 March 2017 / Published: 28 March 2017
(This article belongs to the Special Issue Ultrafast Laser-Based Manufacturing)
View Full-Text   |   Download PDF [1118 KB, uploaded 28 March 2017]   |  

Abstract

Femtosecond (fs)-laser hyperdoped silicon has aroused great interest for applications in infrared photodetectors due to its special properties. Crystallinity and optical absorption influenced by co-hyperdoped nitrogen in surface microstructured silicon, prepared by fs-laser irradiation in gas mixture of SF6/NF3 and SF6/N2 were investigated. In both gas mixtures, nitrogen and sulfur were incorporated at average concentrations above 1019 atoms/cm3 in the 20–400 nm surface layer. Different crystallinity and optical absorption properties were observed for samples microstructured in the two gas mixtures. For samples prepared in SF6/N2, crystallinity and light absorption properties were similar to samples formed in SF6. Significant differences were observed amongst samples formed in SF6/NF3, which possess higher crystallinity and strong sub-band gap absorption. The differing crystallinity and light absorption rates between the two types of nitrogen co-hyperdoped silicon were attributed to different nitrogen configurations in the doped layer. This was induced by fs-laser irradiating silicon in the two N-containing gas mixtures. View Full-Text
Keywords: femtosecond laser; hyperdoped; nitrogen; crystallinity; sub-band gap absorption femtosecond laser; hyperdoped; nitrogen; crystallinity; sub-band gap absorption
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Sun, H.; Xiao, J.; Zhu, S.; Hu, Y.; Feng, G.; Zhuang, J.; Zhao, L. Crystallinity and Sub-Band Gap Absorption of Femtosecond-Laser Hyperdoped Silicon Formed in Different N-Containing Gas Mixtures. Materials 2017, 10, 351.

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