Next Article in Journal
Wettability and Contact Time on a Biomimetic Superhydrophobic Surface
Next Article in Special Issue
Enhanced Ferromagnetism in Nanoscale GaN:Mn Wires Grown on GaN Ridges
Previous Article in Journal
Effect of Solidification Behavior on Microstructures and Mechanical Properties of Ni-Cr-Fe Superalloy Investment Casting
Previous Article in Special Issue
Effects of Nanoscale V-Shaped Pits on GaN-Based Light Emitting Diodes
Article Menu
Issue 3 (March) cover image

Export Article

Open AccessFeature PaperArticle
Materials 2017, 10(3), 252; doi:10.3390/ma10030252

Nitrogen-Polar (000 1 ¯ ) GaN Grown on c-Plane Sapphire with a High-Temperature AlN Buffer

1,2,* and 1
1
Department of Electrical Engineering, Yale University, New Haven, CT 06520, USA
2
Saphlux Inc., Branford, CT 06405, USA
*
Author to whom correspondence should be addressed.
Academic Editors: Xiaohong Tang and Lioz Etgar
Received: 30 December 2016 / Revised: 22 February 2017 / Accepted: 24 February 2017 / Published: 2 March 2017
(This article belongs to the Special Issue Materials Grown by Metal-Organic Vapour Phase Epitaxy)
View Full-Text   |   Download PDF [7768 KB, uploaded 2 March 2017]   |  

Abstract

We demonstrate growing nitrogen-polar (N-polar) GaN epilayer on c-plane sapphire using a thin AlN buffer layer by metalorganic chemical vapor deposition. We have studied the influence of the AlN buffer layer on the polarity, crystalline quality, and surface morphology of the GaN epilayer and found that the growth temperature of the AlN buffer layer played a critical role in the growth of the GaN epilayer. The low growth temperature of the AlN buffer results in gallium-polar GaN. Even a nitridation process has been conducted. High growth temperature for an AlN buffer layer is required to achieve pure N-polarity, high crystalline quality, and smooth surface morphology for a GaN epilayer. View Full-Text
Keywords: MOCVD; N-polar; GaN; AlN buffer MOCVD; N-polar; GaN; AlN buffer
Figures

Figure 1

This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

Scifeed alert for new publications

Never miss any articles matching your research from any publisher
  • Get alerts for new papers matching your research
  • Find out the new papers from selected authors
  • Updated daily for 49'000+ journals and 6000+ publishers
  • Define your Scifeed now

SciFeed Share & Cite This Article

MDPI and ACS Style

Song, J.; Han, J. Nitrogen-Polar (000 1 ¯ ) GaN Grown on c-Plane Sapphire with a High-Temperature AlN Buffer. Materials 2017, 10, 252.

Show more citation formats Show less citations formats

Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Related Articles

Article Metrics

Article Access Statistics

1

Comments

[Return to top]
Materials EISSN 1996-1944 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert
Back to Top