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Materials 2017, 10(11), 1276; https://doi.org/10.3390/ma10111276

Ultra Thin Poly-Si Nanosheet Junctionless Field-Effect Transistor with Nickel Silicide Contact

1
Department of Engineering and System Science, National Tsing Hua University, Hsinchu 30013, Taiwan
2
Department of Electrical Engineering, National United University, Miao-Li 36063, Taiwan
*
Author to whom correspondence should be addressed.
Received: 21 September 2017 / Revised: 18 October 2017 / Accepted: 2 November 2017 / Published: 7 November 2017
(This article belongs to the Section Structure Analysis and Characterization)
View Full-Text   |   Download PDF [7275 KB, uploaded 7 November 2017]   |  

Abstract

This study demonstrated an ultra thin poly-Si junctionless nanosheet field-effect transistor (JL NS-FET) with nickel silicide contact. For the nickel silicide film, two-step annealing and a Ti capping layer were adopted to form an ultra thin uniform nickel silicide film with low sheet resistance (Rs). The JL NS-FET with nickel silicide contact exhibited favorable electrical properties, including a high driving current (>107A), subthreshold slope (186 mV/dec.), and low parasitic resistance. In addition, this study compared the electrical characteristics of JL NS-FETs with and without nickel silicide contact. View Full-Text
Keywords: nickel silicide; junctionless field-effect transistor; ultra thin body nickel silicide; junctionless field-effect transistor; ultra thin body
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).
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Lin, Y.-R.; Tsai, W.-T.; Wu, Y.-C.; Lin, Y.-H. Ultra Thin Poly-Si Nanosheet Junctionless Field-Effect Transistor with Nickel Silicide Contact. Materials 2017, 10, 1276.

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