Promise and Challenges of High-Voltage SiC Bipolar Power Devices
AbstractAlthough various silicon carbide (SiC) power devices with very high blocking voltages over 10 kV have been demonstrated, basic issues associated with the device operation are still not well understood. In this paper, the promise and limitations of high-voltage SiC bipolar devices are presented, taking account of the injection-level dependence of carrier lifetimes. It is shown that the major limitation of SiC bipolar devices originates from band-to-band recombination, which becomes significant at a high-injection level. A trial of unipolar/bipolar hybrid operation to reduce power loss is introduced, and an 11 kV SiC hybrid (merged pin-Schottky) diodes is experimentally demonstrated. The fabricated diodes with an epitaxial anode exhibit much better forward characteristics than diodes with an implanted anode. The temperature dependence of forward characteristics is discussed. View Full-Text
- Supplementary File 1:
Supplementary (PDF, 164 KB)
Scifeed alert for new publicationsNever miss any articles matching your research from any publisher
- Get alerts for new papers matching your research
- Find out the new papers from selected authors
- Updated daily for 49'000+ journals and 6000+ publishers
- Define your Scifeed now
Kimoto, T.; Yamada, K.; Niwa, H.; Suda, J. Promise and Challenges of High-Voltage SiC Bipolar Power Devices. Energies 2016, 9, 908.
Kimoto T, Yamada K, Niwa H, Suda J. Promise and Challenges of High-Voltage SiC Bipolar Power Devices. Energies. 2016; 9(11):908.Chicago/Turabian Style
Kimoto, Tsunenobu; Yamada, Kyosuke; Niwa, Hiroki; Suda, Jun. 2016. "Promise and Challenges of High-Voltage SiC Bipolar Power Devices." Energies 9, no. 11: 908.
Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.