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Energies 2016, 9(11), 908;

Promise and Challenges of High-Voltage SiC Bipolar Power Devices

Department of Electronic Science and Engineering, Kyoto University, Kyoto 615 8510, Japan
Author to whom correspondence should be addressed.
Academic Editors: Alberto Castellazzi and Andrea Irace
Received: 11 October 2016 / Revised: 27 October 2016 / Accepted: 28 October 2016 / Published: 3 November 2016
(This article belongs to the Special Issue Semiconductor Power Devices)
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Although various silicon carbide (SiC) power devices with very high blocking voltages over 10 kV have been demonstrated, basic issues associated with the device operation are still not well understood. In this paper, the promise and limitations of high-voltage SiC bipolar devices are presented, taking account of the injection-level dependence of carrier lifetimes. It is shown that the major limitation of SiC bipolar devices originates from band-to-band recombination, which becomes significant at a high-injection level. A trial of unipolar/bipolar hybrid operation to reduce power loss is introduced, and an 11 kV SiC hybrid (merged pin-Schottky) diodes is experimentally demonstrated. The fabricated diodes with an epitaxial anode exhibit much better forward characteristics than diodes with an implanted anode. The temperature dependence of forward characteristics is discussed. View Full-Text
Keywords: silicon carbide; power device; carrier lifetime; conductivity modulation; (merged pin-Schottky) diodes silicon carbide; power device; carrier lifetime; conductivity modulation; (merged pin-Schottky) diodes

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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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Kimoto, T.; Yamada, K.; Niwa, H.; Suda, J. Promise and Challenges of High-Voltage SiC Bipolar Power Devices. Energies 2016, 9, 908.

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