Graded-Bandgap Solar Cells Using All-Electrodeposited ZnS, CdS and CdTe Thin-Films
AbstractA 3-layer graded-bandgap solar cell with glass/FTO/ZnS/CdS/CdTe/Au structure has been fabricated using all-electrodeposited ZnS, CdS and CdTe thin layers. The three semiconductor layers were electrodeposited using a two-electrode system for process simplification. The incorporation of a wide bandgap amorphous ZnS as a buffer/window layer to form glass/FTO/ZnS/CdS/CdTe/Au solar cell resulted in the formation of this 3-layer graded-bandgap device structure. This has yielded corresponding improvement in all the solar cell parameters resulting in a conversion efficiency >10% under AM1.5 illumination conditions at room temperature, compared to the 8.0% efficiency of a 2-layer glass/FTO/CdS/CdTe/Au reference solar cell structure. These results demonstrate the advantages of the multi-layer graded-bandgap device architecture over the conventional 2-layer structure. In addition, they demonstrate the effective application of the two-electrode system as a simplification to the conventional three-electrode system in the electrodeposition of semiconductors with the elimination of the reference electrode as a possible impurity source. View Full-Text
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Echendu, O.K.; Dharmadasa, I.M. Graded-Bandgap Solar Cells Using All-Electrodeposited ZnS, CdS and CdTe Thin-Films. Energies 2015, 8, 4416-4435.
Echendu OK, Dharmadasa IM. Graded-Bandgap Solar Cells Using All-Electrodeposited ZnS, CdS and CdTe Thin-Films. Energies. 2015; 8(5):4416-4435.Chicago/Turabian Style
Echendu, Obi K.; Dharmadasa, Imyhamy M. 2015. "Graded-Bandgap Solar Cells Using All-Electrodeposited ZnS, CdS and CdTe Thin-Films." Energies 8, no. 5: 4416-4435.