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Energies 2017, 10(9), 1322; doi:10.3390/en10091322

Magnetron Sputter Epitaxy of High-Quality GaN Nanorods on Functional and Cost-Effective Templates/Substrates

Thin Film Physics Division, Department of Physics, Chemistry and Biology (IFM), Linköping University, Linköping SE-58183, Sweden
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Received: 14 July 2017 / Revised: 28 August 2017 / Accepted: 31 August 2017 / Published: 2 September 2017
(This article belongs to the Special Issue Solid State Lighting)
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Abstract

We demonstrate the versatility of magnetron sputter epitaxy by achieving high-quality GaN nanorods on different substrate/template combinations, specifically Si, SiC, TiN/Si, ZrB2/Si, ZrB2/SiC, Mo, and Ti. Growth temperature was optimized on Si, TiN/Si, and ZrB2/Si, resulting in increased nanorod aspect ratio with temperature. All nanorods exhibit high purity and quality, proved by the strong bandedge emission recorded with cathodoluminescence spectroscopy at room temperature as well as transmission electron microscopy. These substrates/templates are affordable compared to many conventional substrates, and the direct deposition onto them eliminates cumbersome post-processing steps in device fabrication. Thus, magnetron sputter epitaxy offers an attractive alternative for simple and affordable fabrication in optoelectronic device technology. View Full-Text
Keywords: GaN; nanorods; Si, SiC, Ti, Mo, TiN and ZrB2 templates; magnetron sputtering; epitaxy GaN; nanorods; Si, SiC, Ti, Mo, TiN and ZrB2 templates; magnetron sputtering; epitaxy
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MDPI and ACS Style

Serban, E.A.; Palisaitis, J.; Junaid, M.; Tengdelius, L.; Högberg, H.; Hultman, L.; Persson, P.O.Å.; Birch, J.; Hsiao, C.-L. Magnetron Sputter Epitaxy of High-Quality GaN Nanorods on Functional and Cost-Effective Templates/Substrates. Energies 2017, 10, 1322.

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