Sensors 2009, 9(9), 7097-7110; doi:10.3390/s90907097
Review

Photocurable Polymers for Ion Selective Field Effect Transistors. 20 Years of Applications

Instituto de Microelectrónica de Barcelona (IMB-CNM-CSIC), Campus UAB, 08193 Bellaterra, Barcelona, Spain
* Author to whom correspondence should be addressed.
Received: 10 June 2009; in revised form: 27 August 2009 / Accepted: 29 August 2009 / Published: 7 September 2009
(This article belongs to the Special Issue ISFET Sensors)
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Abstract: Application of photocurable polymers for encapsulation of ion selective field effect transistors (ISFET) and for membrane formation in chemical sensitive field effect transistors (ChemFET) during the last 20 years is discussed. From a technological point of view these materials are quite interesting because they allow the use of standard photo-lithographic processes, which reduces significantly the time required for sensor encapsulation and membrane deposition and the amount of manual work required for this, all items of importance for sensor mass production. Problems associated with the application of this kind of polymers in sensors are analysed and estimation of future trends in this field of research are presented.
Keywords: ISFET; photocurable; polymers; membrane; chemical sensor

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MDPI and ACS Style

Abramova, N.; Bratov, A. Photocurable Polymers for Ion Selective Field Effect Transistors. 20 Years of Applications. Sensors 2009, 9, 7097-7110.

AMA Style

Abramova N, Bratov A. Photocurable Polymers for Ion Selective Field Effect Transistors. 20 Years of Applications. Sensors. 2009; 9(9):7097-7110.

Chicago/Turabian Style

Abramova, Natalia; Bratov, Andrei. 2009. "Photocurable Polymers for Ion Selective Field Effect Transistors. 20 Years of Applications." Sensors 9, no. 9: 7097-7110.

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