Next Article in Journal
Microgyroscope Temperature Effects and Compensation-Control Methods
Next Article in Special Issue
An Integrated ISFET Sensor Array
Previous Article in Journal
Turbidimeter Design and Analysis: A Review on Optical Fiber Sensors for the Measurement of Water Turbidity
Previous Article in Special Issue
Photocurable Polymers for Ion Selective Field Effect Transistors. 20 Years of Applications
Article Menu

Export Article

Open AccessArticle
Sensors 2009, 9(10), 8336-8348; doi:10.3390/s91008336

A CMOS-Compatible, Low-Noise ISFET Based on High Efficiency Ion-Modulated Lateral-Bipolar Conduction

Institute of Electronics Engineering, National Tsing Hua University, 30013 HsinChu, Taiwan
Author to whom correspondence should be addressed.
Received: 30 July 2009 / Revised: 25 September 2009 / Accepted: 14 October 2009 / Published: 21 October 2009
(This article belongs to the Special Issue ISFET Sensors)
View Full-Text   |   Download PDF [440 KB, uploaded 21 June 2014]   |  


Ion-sensitive, field-effect transistors (ISFET) have been useful biosensors in many applications. However, the signal-to-noise ratio of the ISFET is limited by its intrinsic, low-frequency noise. This paper presents an ISFET capable of utilizing lateral-bipolar conduction to reduce low-frequency noise. With a particular layout design, the conduction efficiency is further enhanced. Moreover, the ISFET is compatible with the standard CMOS technology. All materials above the gate-oxide are removed by simple, die-level post-CMOS process, allowing ions to modulate the lateral-bipolar current directly. By varying the gate-to-bulk voltage, the operation mode of the ISFET is controlled effectively, so is the noise performance measured and compared. Finally, the biasing conditions preferable for different low-noise applications are identified. Under the identified biasing condition, the signal-to-noise ratio of the ISFET as a pH sensor is proved to be improved by more than five times. View Full-Text
Keywords: ISFET; low noise; CMOS-compatible; lateral-bipolar conduction ISFET; low noise; CMOS-compatible; lateral-bipolar conduction

This is an open access article distributed under the Creative Commons Attribution License (CC BY 3.0).

Scifeed alert for new publications

Never miss any articles matching your research from any publisher
  • Get alerts for new papers matching your research
  • Find out the new papers from selected authors
  • Updated daily for 49'000+ journals and 6000+ publishers
  • Define your Scifeed now

SciFeed Share & Cite This Article

MDPI and ACS Style

Chang, S.-R.; Chen, H. A CMOS-Compatible, Low-Noise ISFET Based on High Efficiency Ion-Modulated Lateral-Bipolar Conduction. Sensors 2009, 9, 8336-8348.

Show more citation formats Show less citations formats

Related Articles

Article Metrics

Article Access Statistics



[Return to top]
Sensors EISSN 1424-8220 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert
Back to Top