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Sensors 2009, 9(10), 8336-8348; doi:10.3390/s91008336
Article

A CMOS-Compatible, Low-Noise ISFET Based on High Efficiency Ion-Modulated Lateral-Bipolar Conduction

 and *
Received: 30 July 2009; in revised form: 25 September 2009 / Accepted: 14 October 2009 / Published: 21 October 2009
(This article belongs to the Special Issue ISFET Sensors)
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Abstract: Ion-sensitive, field-effect transistors (ISFET) have been useful biosensors in many applications. However, the signal-to-noise ratio of the ISFET is limited by its intrinsic, low-frequency noise. This paper presents an ISFET capable of utilizing lateral-bipolar conduction to reduce low-frequency noise. With a particular layout design, the conduction efficiency is further enhanced. Moreover, the ISFET is compatible with the standard CMOS technology. All materials above the gate-oxide are removed by simple, die-level post-CMOS process, allowing ions to modulate the lateral-bipolar current directly. By varying the gate-to-bulk voltage, the operation mode of the ISFET is controlled effectively, so is the noise performance measured and compared. Finally, the biasing conditions preferable for different low-noise applications are identified. Under the identified biasing condition, the signal-to-noise ratio of the ISFET as a pH sensor is proved to be improved by more than five times.
Keywords: ISFET; low noise; CMOS-compatible; lateral-bipolar conduction ISFET; low noise; CMOS-compatible; lateral-bipolar conduction
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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MDPI and ACS Style

Chang, S.-R.; Chen, H. A CMOS-Compatible, Low-Noise ISFET Based on High Efficiency Ion-Modulated Lateral-Bipolar Conduction. Sensors 2009, 9, 8336-8348.

AMA Style

Chang S-R, Chen H. A CMOS-Compatible, Low-Noise ISFET Based on High Efficiency Ion-Modulated Lateral-Bipolar Conduction. Sensors. 2009; 9(10):8336-8348.

Chicago/Turabian Style

Chang, Sheng-Ren; Chen, Hsin. 2009. "A CMOS-Compatible, Low-Noise ISFET Based on High Efficiency Ion-Modulated Lateral-Bipolar Conduction." Sensors 9, no. 10: 8336-8348.


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