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Sensors 2006, 6(4), 405-419; doi:10.3390/s6040405
Article
High-temperature MEMS Heater Platforms: Long-term Performance of Metal and Semiconductor Heater Materials
1
Corporate Research Centre, EADS Deutschland GmbH, D-81663 München, Germany
2
Institute of Microtechnology Mainz, D-55129 Mainz, Germany
* Author to whom correspondence should be addressed.
Received: 12 July 2005 / Accepted: 24 March 2006 / Published: 7 April 2006
Abstract: Micromachined thermal heater platforms offer low electrical power consumptionand high modulation speed, i.e. properties which are advantageous for realizing non-dispersive infrared (NDIR) gas- and liquid monitoring systems. In this paper, we report oninvestigations on silicon-on-insulator (SOI) based infrared (IR) emitter devices heated byemploying different kinds of metallic and semiconductor heater materials. Our resultsclearly reveal the superior high-temperature performance of semiconductor over metallicheater materials. Long-term stable emitter operation in the vicinity of 1300 K could beattained using heavily antimony-doped tin dioxide (SnO2:Sb) heater elements.
Keywords: Hotplate; heater metallisation; high-temperature stability; electro-migration; doped silicon; doped metal oxide; antimony doped tin oxide.
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MDPI and ACS Style
Spannhake, J.; Schulz, O.; Helwig, A.; Krenkow, A.; Müller, G.; Doll, T. High-temperature MEMS Heater Platforms: Long-term Performance of Metal and Semiconductor Heater Materials. Sensors 2006, 6, 405-419.
AMA StyleSpannhake J., Schulz O., Helwig A., Krenkow A., Müller G., Doll T. High-temperature MEMS Heater Platforms: Long-term Performance of Metal and Semiconductor Heater Materials. Sensors. 2006; 6(4):405-419.
Chicago/Turabian StyleSpannhake, Jan; Schulz, Olaf; Helwig, Andreas; Krenkow, Angelika; Müller, Gerhard; Doll, Theodor. 2006. "High-temperature MEMS Heater Platforms: Long-term Performance of Metal and Semiconductor Heater Materials." Sensors 6, no. 4: 405-419.
Sensors
EISSN 1424-8220
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