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Sensors 2006, 6(4), 405-419; doi:10.3390/s6040405

High-temperature MEMS Heater Platforms: Long-term Performance of Metal and Semiconductor Heater Materials

1
Corporate Research Centre, EADS Deutschland GmbH, D-81663 München, Germany
2
Institute of Microtechnology Mainz, D-55129 Mainz, Germany
*
Author to whom correspondence should be addressed.
Received: 12 July 2005 / Accepted: 24 March 2006 / Published: 7 April 2006
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Abstract

Micromachined thermal heater platforms offer low electrical power consumptionand high modulation speed, i.e. properties which are advantageous for realizing non-dispersive infrared (NDIR) gas- and liquid monitoring systems. In this paper, we report oninvestigations on silicon-on-insulator (SOI) based infrared (IR) emitter devices heated byemploying different kinds of metallic and semiconductor heater materials. Our resultsclearly reveal the superior high-temperature performance of semiconductor over metallicheater materials. Long-term stable emitter operation in the vicinity of 1300 K could beattained using heavily antimony-doped tin dioxide (SnO2:Sb) heater elements. View Full-Text
Keywords: Hotplate; heater metallisation; high-temperature stability; electro-migration; doped silicon; doped metal oxide; antimony doped tin oxide. Hotplate; heater metallisation; high-temperature stability; electro-migration; doped silicon; doped metal oxide; antimony doped tin oxide.
This is an open access article distributed under the Creative Commons Attribution License (CC BY 3.0).

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MDPI and ACS Style

Spannhake, J.; Schulz, O.; Helwig, A.; Krenkow, A.; Müller, G.; Doll, T. High-temperature MEMS Heater Platforms: Long-term Performance of Metal and Semiconductor Heater Materials. Sensors 2006, 6, 405-419.

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