Sensors 2003, 3(7), 202-212; doi:10.3390/s30700202
Flow-velocity Microsensors Based on Semiconductor Fieldeffect Structures
1
Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany
2
Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan
3
University of Applied Sciences, Aachen, Division Jülich, Ginsterweg 1, D-52428, Jülich, Germany
*
Author to whom correspondence should be addressed.
Received: 18 May 2003 / Accepted: 24 June 2003 / Published: 27 July 2003
Abstract
A time-of-flight-type flow-velocity sensor employing the in-situ electrochemically generation of ion-tracers is developed. The sensor consists of an ion generator and two downstream-placed pH-sensitive Ta2O5-gate ISFETs (ion-sensitive field-effect transistor) that detect generated H+- or OH--ions. The results of the developed flow-velocity sensor under different modes of ion generation are presented and discussed. By applying this ISFET-array, the time of flight, and consequently, the flow velocity can be accurately evaluated using the shift of the response curve of the respective ISFETs in the array along the time scale. A good linearity between the measured flow velocity with the ISFET-array and the delivered flow rate of the pump is observed. In addition, a possibility of flowvelocity measurements by means of a LAPS (light-addressable potentiometric sensor) is firstly demonstrated. View Full-TextKeywords:
Flow-velocity sensor; time of flight; ISFET; LAPS; pH; ion generation
This is an open access article distributed under the Creative Commons Attribution License (CC BY 3.0).
Scifeed alert for new publications
Never miss any articles matching your research from any publisher- Get alerts for new papers matching your research
- Find out the new papers from selected authors
- Updated daily for 49'000+ journals and 6000+ publishers
- Define your Scifeed now
Share & Cite This Article
MDPI and ACS Style
Poghossian, A.; Yoshinobu, T.; Schöning, M.J. Flow-velocity Microsensors Based on Semiconductor Fieldeffect Structures. Sensors 2003, 3, 202-212.