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Sensors 2018, 18(8), 2569; https://doi.org/10.3390/s18082569

An X-band Bi-Directional Transmit/Receive Module for a Phased Array System in 65-nm CMOS

1
Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Korea
2
Yongin Research Institute, Hanwha Systems, Gyeonggi-do 17121, Korea
*
Author to whom correspondence should be addressed.
Received: 4 July 2018 / Revised: 3 August 2018 / Accepted: 4 August 2018 / Published: 6 August 2018
(This article belongs to the Section Remote Sensors)

Abstract

We present an X-band bi-directional transmit/receive module (TRM) for a phased array system utilized in radar-based sensor systems. The proposed module, comprising a 6-bit phase shifter, a 6-bit digital step attenuator, and bi-directional gain amplifiers, is fabricated using 65-nm CMOS technology. By constructing passive networks in the phase-shifter and the variable attenuator, the implemented TRM provides amplitude and phase control with 360° phase coverage and 5.625° as the minimum step size while the attenuation range varies from 0 to 31.5 dB with a step size of 0.5 dB. The fabricated T/R module in all of the phase shift states had RMS phase errors of less than 4° and an RMS amplitude error of less than 0.93 dB at 9–11 GHz. The output 1dB gain compression point (OP1dB) of the chip was 5.13 dBm at 10 GHz. The circuit occupies 3.92 × 2.44 mm2 of the chip area and consumes 170 mW of DC power. View Full-Text
Keywords: radar-based sensors; phased array antenna; phase shifter; attenuator; bi-directional gain amplifier; T/R module radar-based sensors; phased array antenna; phase shifter; attenuator; bi-directional gain amplifier; T/R module
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).
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Nguyen, V.-V.; Nam, H.; Choe, Y.J.; Lee, B.-H.; Park, J.-D. An X-band Bi-Directional Transmit/Receive Module for a Phased Array System in 65-nm CMOS. Sensors 2018, 18, 2569.

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