Temporal Noise Analysis of Charge-Domain Sampling Readout Circuits for CMOS Image Sensors†
AbstractThis paper presents a temporal noise analysis of charge-domain sampling readout circuits for Complementary Metal-Oxide Semiconductor (CMOS) image sensors. In order to address the trade-off between the low input-referred noise and high dynamic range, a Gm-cell-based pixel together with a charge-domain correlated-double sampling (CDS) technique has been proposed to provide a way to efficiently embed a tunable conversion gain along the read-out path. Such readout topology, however, operates in a non-stationery large-signal behavior, and the statistical properties of its temporal noise are a function of time. Conventional noise analysis methods for CMOS image sensors are based on steady-state signal models, and therefore cannot be readily applied for Gm-cell-based pixels. In this paper, we develop analysis models for both thermal noise and flicker noise in Gm-cell-based pixels by employing the time-domain linear analysis approach and the non-stationary noise analysis theory, which help to quantitatively evaluate the temporal noise characteristic of Gm-cell-based pixels. Both models were numerically computed in MATLAB using design parameters of a prototype chip, and compared with both simulation and experimental results. The good agreement between the theoretical and measurement results verifies the effectiveness of the proposed noise analysis models. View Full-Text
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Ge, X.; Theuwissen, A.J.P. Temporal Noise Analysis of Charge-Domain Sampling Readout Circuits for CMOS Image Sensors. Sensors 2018, 18, 707.
Ge X, Theuwissen AJP. Temporal Noise Analysis of Charge-Domain Sampling Readout Circuits for CMOS Image Sensors. Sensors. 2018; 18(3):707.Chicago/Turabian Style
Ge, Xiaoliang; Theuwissen, Albert J.P. 2018. "Temporal Noise Analysis of Charge-Domain Sampling Readout Circuits for CMOS Image Sensors." Sensors 18, no. 3: 707.
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