Frequency Response of Graphene Electrolyte-Gated Field-Effect Transistors
AbstractThis work develops the first frequency-dependent small-signal model for graphene electrolyte-gated field-effect transistors (EGFETs). Graphene EGFETs are microfabricated to measure intrinsic voltage gain, frequency response, and to develop a frequency-dependent small-signal model. The transfer function of the graphene EGFET small-signal model is found to contain a unique pole due to a resistive element, which stems from electrolyte gating. Intrinsic voltage gain, cutoff frequency, and transition frequency for the microfabricated graphene EGFETs are approximately 3.1 V/V, 1.9 kHz, and 6.9 kHz, respectively. This work marks a critical step in the development of high-speed chemical and biological sensors using graphene EGFETs. View Full-Text
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Mackin, C.; McVay, E.; Palacios, T. Frequency Response of Graphene Electrolyte-Gated Field-Effect Transistors. Sensors 2018, 18, 494.
Mackin C, McVay E, Palacios T. Frequency Response of Graphene Electrolyte-Gated Field-Effect Transistors. Sensors. 2018; 18(2):494.Chicago/Turabian Style
Mackin, Charles; McVay, Elaine; Palacios, Tomás. 2018. "Frequency Response of Graphene Electrolyte-Gated Field-Effect Transistors." Sensors 18, no. 2: 494.