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Sensors 2018, 18(2), 494; https://doi.org/10.3390/s18020494

Frequency Response of Graphene Electrolyte-Gated Field-Effect Transistors

Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 77 Massachusetts Avenue, Cambridge, MA 02139, USA
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Received: 16 January 2018 / Revised: 31 January 2018 / Accepted: 1 February 2018 / Published: 7 February 2018
(This article belongs to the Special Issue Thin-Film Transistors for Biomedical and Chemical Sensing)
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Abstract

This work develops the first frequency-dependent small-signal model for graphene electrolyte-gated field-effect transistors (EGFETs). Graphene EGFETs are microfabricated to measure intrinsic voltage gain, frequency response, and to develop a frequency-dependent small-signal model. The transfer function of the graphene EGFET small-signal model is found to contain a unique pole due to a resistive element, which stems from electrolyte gating. Intrinsic voltage gain, cutoff frequency, and transition frequency for the microfabricated graphene EGFETs are approximately 3.1 V/V, 1.9 kHz, and 6.9 kHz, respectively. This work marks a critical step in the development of high-speed chemical and biological sensors using graphene EGFETs. View Full-Text
Keywords: ambipolar transistor; chemical and biological sensors; device modeling; frequency response; small-signal model; electrophysiology; graphene field-effect transistor (GFET); graphene electrolyte-gated field-effect transistor (EGFET) ambipolar transistor; chemical and biological sensors; device modeling; frequency response; small-signal model; electrophysiology; graphene field-effect transistor (GFET); graphene electrolyte-gated field-effect transistor (EGFET)
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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Mackin, C.; McVay, E.; Palacios, T. Frequency Response of Graphene Electrolyte-Gated Field-Effect Transistors. Sensors 2018, 18, 494.

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