A 750 K Photocharge Linear Full Well in a 3.2 μm HDR Pixel with Complementary Carrier Collection†
AbstractMainly driven by automotive applications, there is an increasing interest in image sensors combining a high dynamic range (HDR) and immunity to the flicker issue. The native HDR pixel concept based on a parallel electron and hole collection for, respectively, a low signal level and a high signal level is particularly well-suited for this performance challenge. The theoretical performance of this pixel is modeled and compared to alternative HDR pixel architectures. This concept is proven with the fabrication of a 3.2 μm pixel in a back-side illuminated (BSI) process including capacitive deep trench isolation (CDTI). The electron-based image uses a standard 4T architecture with a pinned diode and provides state-of-the-art low-light performance, which is not altered by the pixel modifications introduced for the hole collection. The hole-based image reaches 750 kh+ linear storage capability thanks to a 73 fF CDTI capacitor. Both images are taken from the same integration window, so the HDR reconstruction is not only immune to the flicker issue but also to motion artifacts. View Full-Text
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Lalanne, F.; Malinge, P.; Hérault, D.; Jamin-Mornet, C.; Virollet, N. A 750 K Photocharge Linear Full Well in a 3.2 μm HDR Pixel with Complementary Carrier Collection. Sensors 2018, 18, 305.
Lalanne F, Malinge P, Hérault D, Jamin-Mornet C, Virollet N. A 750 K Photocharge Linear Full Well in a 3.2 μm HDR Pixel with Complementary Carrier Collection. Sensors. 2018; 18(1):305.Chicago/Turabian Style
Lalanne, Frédéric; Malinge, Pierre; Hérault, Didier; Jamin-Mornet, Clémence; Virollet, Nicolas. 2018. "A 750 K Photocharge Linear Full Well in a 3.2 μm HDR Pixel with Complementary Carrier Collection." Sensors 18, no. 1: 305.
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