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Sensors 2018, 18(1), 203; doi:10.3390/s18010203

An Over 90 dB Intra-Scene Single-Exposure Dynamic Range CMOS Image Sensor Using a 3.0 μm Triple-Gain Pixel Fabricated in a Standard BSI Process

Brillnics Japan Inc., 6-21-12 Minami-Oi, Shinagawa-ku, Tokyo 140-0013, Japan
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Received: 10 November 2017 / Revised: 22 December 2017 / Accepted: 7 January 2018 / Published: 12 January 2018
(This article belongs to the Special Issue Special Issue on the 2017 International Image Sensor Workshop (IISW))
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Abstract

To respond to the high demand for high dynamic range imaging suitable for moving objects with few artifacts, we have developed a single-exposure dynamic range image sensor by introducing a triple-gain pixel and a low noise dual-gain readout circuit. The developed 3 μm pixel is capable of having three conversion gains. Introducing a new split-pinned photodiode structure, linear full well reaches 40 ke. Readout noise under the highest pixel gain condition is 1 e with a low noise readout circuit. Merging two signals, one with high pixel gain and high analog gain, and the other with low pixel gain and low analog gain, a single exposure dynamic rage (SEHDR) signal is obtained. Using this technology, a 1/2.7”, 2M-pixel CMOS image sensor has been developed and characterized. The image sensor also employs an on-chip linearization function, yielding a 16-bit linear signal at 60 fps, and an intra-scene dynamic range of higher than 90 dB was successfully demonstrated. This SEHDR approach inherently mitigates the artifacts from moving objects or time-varying light sources that can appear in the multiple exposure high dynamic range (MEHDR) approach. View Full-Text
Keywords: CMOS image sensor; dynamic range; single exposure; CMOS image sensor pixel CMOS image sensor; dynamic range; single exposure; CMOS image sensor pixel
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Takayanagi, I.; Yoshimura, N.; Mori, K.; Matsuo, S.; Tanaka, S.; Abe, H.; Yasuda, N.; Ishikawa, K.; Okura, S.; Ohsawa, S.; Otaka, T. An Over 90 dB Intra-Scene Single-Exposure Dynamic Range CMOS Image Sensor Using a 3.0 μm Triple-Gain Pixel Fabricated in a Standard BSI Process. Sensors 2018, 18, 203.

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