Next Article in Journal
High-Performance Wireless Ammonia Gas Sensors Based on Reduced Graphene Oxide and Nano-Silver Ink Hybrid Material Loaded on a Patch Antenna
Next Article in Special Issue
Integrated Temperature and Hydrogen Sensors with MEMS Technology
Previous Article in Journal
Network Location-Aware Service Recommendation with Random Walk in Cyber-Physical Systems
Previous Article in Special Issue
Nanometric Integrated Temperature and Thermal Sensors in CMOS-SOI Technology
Article Menu
Issue 9 (September) cover image

Export Article

Open AccessArticle
Sensors 2017, 17(9), 2069; doi:10.3390/s17092069

Differential CMOS Sub-Terahertz Detector with Subthreshold Amplifier

1
Department of Electronic Engineering, Yeungnam University, Gyeongsan, Gyeongbuk-do 38541, Korea
2
Electric Propulsion Research Center, Korea Electrotechnology Research Institute, Changwon, Gyeongnam-do 51543, Korea
3
School of Electrical Engineering, Chung-Ang University, Seoul 06974, Korea
*
Author to whom correspondence should be addressed.
Received: 17 July 2017 / Revised: 4 September 2017 / Accepted: 6 September 2017 / Published: 9 September 2017
(This article belongs to the Special Issue Integrated Sensors)
View Full-Text   |   Download PDF [4811 KB, uploaded 9 September 2017]   |  

Abstract

We propose a differential-type complementary metal-oxide-semiconductor (CMOS) sub-terahertz (THz) detector with a subthreshold preamplifier. The proposed detector improves the voltage responsivity and effective signal-to-noise ratio (SNR) using the subthreshold preamplifier, which is located between the differential detector device and main amplifier. The overall noise of the detector for the THz imaging system is reduced by the preamplifier because it diminishes the noise contribution of the main amplifier. The subthreshold preamplifier is self-biased by the output DC voltage of the detector core and has a dummy structure that cancels the DC offsets generated by the preamplifier itself. The 200 GHz detector fabricated using 0.25 μm CMOS technology includes a low drop-out regulator, current reference blocks, and an integrated antenna. A voltage responsivity of 2020 kV/W and noise equivalent power of 76 pW/√Hz are achieved using the detector at a gate bias of 0.5 V, respectively. The effective SNR at a 103 Hz chopping frequency is 70.9 dB with a 0.7 W/m2 input signal power density. The dynamic range of the raster-scanned THz image is 44.59 dB. View Full-Text
Keywords: CMOS integrated circuit; differential detector; integrated antenna; raster scanning; subthreshold amplifiers; THz detector; THz imaging CMOS integrated circuit; differential detector; integrated antenna; raster scanning; subthreshold amplifiers; THz detector; THz imaging
Figures

Figure 1

This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

Scifeed alert for new publications

Never miss any articles matching your research from any publisher
  • Get alerts for new papers matching your research
  • Find out the new papers from selected authors
  • Updated daily for 49'000+ journals and 6000+ publishers
  • Define your Scifeed now

SciFeed Share & Cite This Article

MDPI and ACS Style

Yang, J.-R.; Han, S.-T.; Baek, D. Differential CMOS Sub-Terahertz Detector with Subthreshold Amplifier. Sensors 2017, 17, 2069.

Show more citation formats Show less citations formats

Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Related Articles

Article Metrics

Article Access Statistics

1

Comments

[Return to top]
Sensors EISSN 1424-8220 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert
Back to Top