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Sensors 2017, 17(8), 1739; doi:10.3390/s17081739

Nanometric Integrated Temperature and Thermal Sensors in CMOS-SOI Technology

Department of Electrical Engineering, Technion—Israel Institute of Technology, Haifa 3200003, Israel
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Received: 6 July 2017 / Revised: 26 July 2017 / Accepted: 27 July 2017 / Published: 29 July 2017
(This article belongs to the Special Issue Integrated Sensors)
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Abstract

This paper reviews and compares the thermal and noise characterization of CMOS (complementary metal-oxide-semiconductor) SOI (Silicon on insulator) transistors and lateral diodes used as temperature and thermal sensors. DC analysis of the measured sensors and the experimental results in a broad (300 K up to 550 K) temperature range are presented. It is shown that both sensors require small chip area, have low power consumption, and exhibit linearity and high sensitivity over the entire temperature range. However, the diode’s sensitivity to temperature variations in CMOS-SOI technology is highly dependent on the diode’s perimeter; hence, a careful calibration for each fabrication process is needed. In contrast, the short thermal time constant of the electrons in the transistor’s channel enables measuring the instantaneous heating of the channel and to determine the local true temperature of the transistor. This allows accurate “on-line” temperature sensing while no additional calibration is needed. In addition, the noise measurements indicate that the diode’s small area and perimeter causes a high 1/f noise in all measured bias currents. This is a severe drawback for the sensor accuracy when using the sensor as a thermal sensor; hence, CMOS-SOI transistors are a better choice for temperature sensing. View Full-Text
Keywords: CMOS–SOI; lateral diodes; temperature sensors; thermal sensors; semiconductor devices CMOS–SOI; lateral diodes; temperature sensors; thermal sensors; semiconductor devices
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Malits, M.; Nemirovsky, Y. Nanometric Integrated Temperature and Thermal Sensors in CMOS-SOI Technology. Sensors 2017, 17, 1739.

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