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Sensors 2017, 17(6), 1191; doi:10.3390/s17061191

Thermal Characterization of Dynamic Silicon Cantilever Array Sensors by Digital Holographic Microscopy

1
Max Planck Institute for Polymer Research, Ackermannweg 10, 55128 Mainz, Germany
2
Laboratoire d’Acoustique de l’Université du Maine (LAUM, UMR CNRS 6613), 72000 Le Mans, France
3
Graduate School of Engineering, Tohoku University, 6-6-01 Aramaki-Aza-Aoba, Aoba-ku, 980-8579 Sendai, Japan
4
Lyncee Tec SA, PSE-A, CH-1015 Lausanne, Switzerland
5
Institut für Chemie, Martin-Luther-Universität Halle-Wittenberg, Kurt-Mothes-Straße 2, 06120 Halle (Saale), Germany
*
Author to whom correspondence should be addressed.
Academic Editor: Mustafa Yavuz
Received: 2 May 2017 / Revised: 17 May 2017 / Accepted: 19 May 2017 / Published: 23 May 2017
(This article belongs to the Special Issue MEMS and Nano-Sensors)
View Full-Text   |   Download PDF [2251 KB, uploaded 23 May 2017]   |  

Abstract

In this paper, we apply a digital holographic microscope (DHM) in conjunction with stroboscopic acquisition synchronization. Here, the temperature-dependent decrease of the first resonance frequency (S1(T)) and Young’s elastic modulus (E1(T)) of silicon micromechanical cantilever sensors (MCSs) are measured. To perform these measurements, the MCSs are uniformly heated from T0 = 298 K to T = 450 K while being externally actuated with a piezo-actuator in a certain frequency range close to their first resonance frequencies. At each temperature, the DHM records the time-sequence of the 3D topographies for the given frequency range. Such holographic data allow for the extracting of the out-of-plane vibrations at any relevant area of the MCSs. Next, the Bode and Nyquist diagrams are used to determine the resonant frequencies with a precision of 0.1 Hz. Our results show that the decrease of resonance frequency is a direct consequence of the reduction of the silicon elastic modulus upon heating. The measured temperature dependence of the Young’s modulus is in very good accordance with the previously-reported values, validating the reliability and applicability of this method for micromechanical sensing applications. View Full-Text
Keywords: digital holography; micromechanical cantilever sensors; thermal load; temperature coefficient of resonance frequency; temperature coefficient of elastic modulus digital holography; micromechanical cantilever sensors; thermal load; temperature coefficient of resonance frequency; temperature coefficient of elastic modulus
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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MDPI and ACS Style

Zakerin, M.; Novak, A.; Toda, M.; Emery, Y.; Natalio, F.; Butt, H.-J.; Berger, R. Thermal Characterization of Dynamic Silicon Cantilever Array Sensors by Digital Holographic Microscopy. Sensors 2017, 17, 1191.

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