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Sensors 2017, 17(4), 765; doi:10.3390/s17040765

Optimum Design Rules for CMOS Hall Sensors

1
Department of Electrical, Electronic and Information Engineering “G. Marconi”—DEI, University of Bologna, Cesena Campus, Via Venezia 52, 47521 Cesena, Italy
2
Advanced Research Center on Electronic Systems (ARCES), University of Bologna, Cesena Campus, Via Venezia 52, 47521 Cesena, Italy
*
Author to whom correspondence should be addressed.
Academic Editor: Vittorio M. N. Passaro
Received: 29 January 2017 / Revised: 29 March 2017 / Accepted: 29 March 2017 / Published: 4 April 2017
(This article belongs to the Special Issue State-of-the-Art Sensors Technologies in Italy 2016)
View Full-Text   |   Download PDF [3116 KB, uploaded 25 April 2017]   |  

Abstract

This manuscript analyzes the effects of design parameters, such as aspect ratio, doping concentration and bias, on the performance of a general CMOS Hall sensor, with insight on current-related sensitivity, power consumption, and bandwidth. The article focuses on rectangular-shaped Hall probes since this is the most general geometry leading to shape-independent results. The devices are analyzed by means of 3D-TCAD simulations embedding galvanomagnetic transport model, which takes into account the Lorentz force acting on carriers due to a magnetic field. Simulation results define a set of trade-offs and design rules that can be used by electronic designers to conceive their own Hall probes. View Full-Text
Keywords: Hall sensors; current-related sensitivity; power consumption; design rules; 3D physical simulations; Hall effect sensor design Hall sensors; current-related sensitivity; power consumption; design rules; 3D physical simulations; Hall effect sensor design
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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Crescentini, M.; Biondi, M.; Romani, A.; Tartagni, M.; Sangiorgi, E. Optimum Design Rules for CMOS Hall Sensors. Sensors 2017, 17, 765.

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