Optimum Design Rules for CMOS Hall Sensors
AbstractThis manuscript analyzes the effects of design parameters, such as aspect ratio, doping concentration and bias, on the performance of a general CMOS Hall sensor, with insight on current-related sensitivity, power consumption, and bandwidth. The article focuses on rectangular-shaped Hall probes since this is the most general geometry leading to shape-independent results. The devices are analyzed by means of 3D-TCAD simulations embedding galvanomagnetic transport model, which takes into account the Lorentz force acting on carriers due to a magnetic field. Simulation results define a set of trade-offs and design rules that can be used by electronic designers to conceive their own Hall probes. View Full-Text
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Crescentini, M.; Biondi, M.; Romani, A.; Tartagni, M.; Sangiorgi, E. Optimum Design Rules for CMOS Hall Sensors. Sensors 2017, 17, 765.
Crescentini M, Biondi M, Romani A, Tartagni M, Sangiorgi E. Optimum Design Rules for CMOS Hall Sensors. Sensors. 2017; 17(4):765.Chicago/Turabian Style
Crescentini, Marco; Biondi, Michele; Romani, Aldo; Tartagni, Marco; Sangiorgi, Enrico. 2017. "Optimum Design Rules for CMOS Hall Sensors." Sensors 17, no. 4: 765.
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