Next Article in Journal
mDARAL: A Multi-Radio Version for the DARAL Routing Algorithm
Next Article in Special Issue
Testing of Piezo-Actuated Glass Micro-Membranes by Optical Low-Coherence Reflectometry
Previous Article in Journal
Hyperspectral Image Classification with Spatial Filtering and \(l_{(2,1)}\) Norm
Previous Article in Special Issue
Topologically Optimized Nano-Positioning Stage Integrating with a Capacitive Comb Sensor
Article Menu
Issue 2 (February) cover image

Export Article

Open AccessArticle
Sensors 2017, 17(2), 322; doi:10.3390/s17020322

A Study on the Thermomechanical Reliability Risks of Through-Silicon-Vias in Sensor Applications

1
Department of Mechanical Engineering, State University of New York at Binghamton, P.O. Box 6000, Binghamton, NY 13902, USA
2
Analog Devices, Inc., Wilmington, MA 01887, USA
These authors contributed equally to this work.
*
Authors to whom correspondence should be addressed.
Academic Editor: Stefano Mariani
Received: 1 November 2016 / Revised: 9 January 2017 / Accepted: 16 January 2017 / Published: 9 February 2017
(This article belongs to the Collection Modeling, Testing and Reliability Issues in MEMS Engineering)
View Full-Text   |   Download PDF [6739 KB, uploaded 10 February 2017]   |  

Abstract

Reliability risks for two different types of through-silicon-vias (TSVs) are discussed in this paper. The first is a partially-filled copper TSV, if which the copper layer covers the side walls and bottom. A polymer is used to fill the rest of the cavity. Stresses in risk sites are studied and ranked for this TSV structure by FEA modeling. Parametric studies for material properties (modulus and thermal expansion) of TSV polymer are performed. The second type is a high aspect ratio TSV filled by polycrystalline silicon (poly Si). Potential risks of the voids in the poly Si due to filling defects are studied. Fracture mechanics methods are utilized to evaluate the risk for two different assembly conditions: package assembled to printed circuit board (PCB) and package assembled to flexible substrate. The effect of board/substrate/die thickness and the size and location of the void are discussed. View Full-Text
Keywords: MEMS packaging; optical sensor; TSV; reliability; finite element analysis (FEA); fracture mechanics MEMS packaging; optical sensor; TSV; reliability; finite element analysis (FEA); fracture mechanics
Figures

Figure 1

This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

Scifeed alert for new publications

Never miss any articles matching your research from any publisher
  • Get alerts for new papers matching your research
  • Find out the new papers from selected authors
  • Updated daily for 49'000+ journals and 6000+ publishers
  • Define your Scifeed now

SciFeed Share & Cite This Article

MDPI and ACS Style

Shao, S.; Liu, D.; Niu, Y.; O’Donnell, K.; Sengupta, D.; Park, S. A Study on the Thermomechanical Reliability Risks of Through-Silicon-Vias in Sensor Applications. Sensors 2017, 17, 322.

Show more citation formats Show less citations formats

Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Related Articles

Article Metrics

Article Access Statistics

1

Comments

[Return to top]
Sensors EISSN 1424-8220 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert
Back to Top