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Sensors 2017, 17(1), 212; doi:10.3390/s17010212

Fabrication Technology and Characteristics of a Magnetic Sensitive Transistor with nc-Si:H/c-Si Heterojunction

School of Electronic Engineering, Heilongjiang University, Harbin 150080, China
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Author to whom correspondence should be addressed.
Academic Editor: Mustafa Yavuz
Received: 10 December 2016 / Revised: 11 January 2017 / Accepted: 17 January 2017 / Published: 22 January 2017
(This article belongs to the Special Issue MEMS and Nano-Sensors)
View Full-Text   |   Download PDF [954 KB, uploaded 22 January 2017]   |  

Abstract

This paper presents a magnetically sensitive transistor using a nc-Si:H/c-Si heterojunction as an emitter junction. By adopting micro electro-mechanical systems (MEMS) technology and chemical vapor deposition (CVD) method, the nc-Si:H/c-Si heterojunction silicon magnetically sensitive transistor (HSMST) chips were designed and fabricated on a p-type <100> orientation double-side polished silicon wafer with high resistivity. In addition, a collector load resistor ( R L ) was integrated on the chip, and the resistor converted the collector current ( I C ) to a collector output voltage ( V out ). When I B = 8.0 mA, V DD = 10.0 V, and R L = 4.1 kΩ, the magnetic sensitivity ( S V ) at room temperature and temperature coefficient ( α C ) of the collector current for HSMST were 181 mV/T and −0.11%/°C, respectively. The experimental results show that the magnetic sensitivity and temperature characteristics of the proposed transistor can be obviously improved by the use of a nc-Si:H/c-Si heterojunction as an emitter junction. View Full-Text
Keywords: nc-Si:H/c-Si heterojunction; magnetic sensitive transistor; MEMS technology; temperature characteristics nc-Si:H/c-Si heterojunction; magnetic sensitive transistor; MEMS technology; temperature characteristics
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MDPI and ACS Style

Zhao, X.; Li, B.; Wen, D. Fabrication Technology and Characteristics of a Magnetic Sensitive Transistor with nc-Si:H/c-Si Heterojunction. Sensors 2017, 17, 212.

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