Next Article in Journal
Target Capturing Control for Space Robots with Unknown Mass Properties: A Self-Tuning Method Based on Gyros and Cameras
Previous Article in Journal
Surface Plasmon Resonance-Based Fiber Optic Sensors Utilizing Molecular Imprinting
Article Menu

Export Article

Open AccessArticle
Sensors 2016, 16(9), 1389; doi:10.3390/s16091389

Drain Current Modulation of a Single Drain MOSFET by Lorentz Force for Magnetic Sensing Application

Graduate Institute of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Road, Kwei-Shan, Tao-Yuan 333, Taiwan
*
Authors to whom correspondence should be addressed.
Academic Editor: Andreas Hütten
Received: 6 June 2016 / Revised: 8 August 2016 / Accepted: 25 August 2016 / Published: 30 August 2016
(This article belongs to the Section Physical Sensors)
View Full-Text   |   Download PDF [3868 KB, uploaded 30 August 2016]   |  

Abstract

This paper reports a detailed analysis of the drain current modulation of a single-drain normal-gate n channel metal-oxide semiconductor field effect transistor (n-MOSFET) under an on-chip magnetic field. A single-drain n-MOSFET has been fabricated and placed in the center of a square-shaped metal loop which generates the on-chip magnetic field. The proposed device designed is much smaller in size with respect to the metal loop, which ensures that the generated magnetic field is approximately uniform. The change of drain current and change of bulk current per micron device width has been measured. The result shows that the difference drain current is about 145 µA for the maximum applied magnetic field. Such changes occur from the applied Lorentz force to push out the carriers from the channel. Based on the drain current difference, the change in effective mobility has been detected up to 4.227%. Furthermore, a detailed investigation reveals that the device behavior is quite different in subthreshold and saturation region. A change of 50.24 µA bulk current has also been measured. Finally, the device has been verified for use as a magnetic sensor with sensitivity 4.084% (29.6 T−1), which is very effective as compared to other previously reported works for a single device. View Full-Text
Keywords: MOSFET; magnetic sensor; Lorentz force MOSFET; magnetic sensor; Lorentz force
Figures

Figure 1

This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

Scifeed alert for new publications

Never miss any articles matching your research from any publisher
  • Get alerts for new papers matching your research
  • Find out the new papers from selected authors
  • Updated daily for 49'000+ journals and 6000+ publishers
  • Define your Scifeed now

SciFeed Share & Cite This Article

MDPI and ACS Style

Chatterjee, P.; Chow, H.-C.; Feng, W.-S. Drain Current Modulation of a Single Drain MOSFET by Lorentz Force for Magnetic Sensing Application. Sensors 2016, 16, 1389.

Show more citation formats Show less citations formats

Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Related Articles

Article Metrics

Article Access Statistics

1

Comments

[Return to top]
Sensors EISSN 1424-8220 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert
Back to Top