Fabrication of a Horizontal and a Vertical Large Surface Area Nanogap Electrochemical Sensor
AbstractNanogap sensors have a wide range of applications as they can provide accurate direct detection of biomolecules through impedimetric or amperometric signals. Signal response from nanogap sensors is dependent on both the electrode spacing and surface area. However, creating large surface area nanogap sensors presents several challenges during fabrication. We show two different approaches to achieve both horizontal and vertical coplanar nanogap geometries. In the first method we use electron-beam lithography (EBL) to pattern an 11 mm long serpentine nanogap (215 nm) between two electrodes. For the second method we use inductively-coupled plasma (ICP) reactive ion etching (RIE) to create a channel in a silicon substrate, optically pattern a buried 1.0 mm × 1.5 mm electrode before anodically bonding a second identical electrode, patterned on glass, directly above. The devices have a wide range of applicability in different sensing techniques with the large area nanogaps presenting advantages over other devices of the same family. As a case study we explore the detection of peptide nucleic acid (PNA)−DNA binding events using dielectric spectroscopy with the horizontal coplanar device. View Full-Text
Share & Cite This Article
Hammond, J.L.; Rosamond, M.C.; Sivaraya, S.; Marken, F.; Estrela, P. Fabrication of a Horizontal and a Vertical Large Surface Area Nanogap Electrochemical Sensor. Sensors 2016, 16, 2128.
Hammond JL, Rosamond MC, Sivaraya S, Marken F, Estrela P. Fabrication of a Horizontal and a Vertical Large Surface Area Nanogap Electrochemical Sensor. Sensors. 2016; 16(12):2128.Chicago/Turabian Style
Hammond, Jules L.; Rosamond, Mark C.; Sivaraya, Siva; Marken, Frank; Estrela, Pedro. 2016. "Fabrication of a Horizontal and a Vertical Large Surface Area Nanogap Electrochemical Sensor." Sensors 16, no. 12: 2128.
Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.