Top-Down CMOS-NEMS Polysilicon Nanowire with Piezoresistive Transduction
AbstractA top-down clamped-clamped beam integrated in a CMOS technology with a cross section of 500 nm × 280 nm has been electrostatic actuated and sensed using two different transduction methods: capacitive and piezoresistive. The resonator made from a single polysilicon layer has a fundamental in-plane resonance at 27 MHz. Piezoresistive transduction avoids the effect of the parasitic capacitance assessing the capability to use it and enhance the CMOS-NEMS resonators towards more efficient oscillator. The displacement derived from the capacitive transduction allows to compute the gauge factor for the polysilicon material available in the CMOS technology. View Full-Text
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Marigó, E.; Sansa, M.; Pérez-Murano, F.; Uranga, A.; Barniol, N. Top-Down CMOS-NEMS Polysilicon Nanowire with Piezoresistive Transduction. Sensors 2015, 15, 17036-17047.
Marigó E, Sansa M, Pérez-Murano F, Uranga A, Barniol N. Top-Down CMOS-NEMS Polysilicon Nanowire with Piezoresistive Transduction. Sensors. 2015; 15(7):17036-17047.Chicago/Turabian Style
Marigó, Eloi; Sansa, Marc; Pérez-Murano, Francesc; Uranga, Arantxa; Barniol, Núria. 2015. "Top-Down CMOS-NEMS Polysilicon Nanowire with Piezoresistive Transduction." Sensors 15, no. 7: 17036-17047.