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Sensors 2015, 15(5), 12022-12033; doi:10.3390/s150512022

Gated Silicon Drift Detector Fabricated from a Low-Cost Silicon Wafer

Department of Electrical and Electronic Engineering, Osaka Electro-Communication University, 18-8 Hatsu-cho, Neyagawa, Osaka 572-8530, Japan
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Academic Editor: Yoshiteru Ishida
Received: 7 April 2015 / Revised: 11 May 2015 / Accepted: 16 May 2015 / Published: 22 May 2015
(This article belongs to the Special Issue State-of-the-Art Sensors Technology in Japan 2015)
View Full-Text   |   Download PDF [1898 KB, uploaded 22 May 2015]   |  

Abstract

Inexpensive high-resolution silicon (Si) X-ray detectors are required for on-site surveys of traces of hazardous elements in food and soil by measuring the energies and counts of X-ray fluorescence photons radially emitted from these elements. Gated silicon drift detectors (GSDDs) are much cheaper to fabricate than commercial silicon drift detectors (SDDs). However, previous GSDDs were fabricated from \(10\)-k\(\Omega \cdot\)cm Si wafers, which are more expensive than \(2\)-k\(\Omega \cdot\)cm Si wafers used in commercial SDDs. To fabricate cheaper portable X-ray fluorescence instruments, we investigate GSDDs formed from \(2\)-k\(\Omega \cdot\)cm Si wafers. The thicknesses of commercial SDDs are up to \(0.5\) mm, which can detect photons with energies up to \(27\) keV, whereas we describe GSDDs that can detect photons with energies of up to \(35\) keV. We simulate the electric potential distributions in GSDDs with Si thicknesses of \(0.5\) and \(1\) mm at a single high reverse bias. GSDDs with one gate pattern using any resistivity Si wafer can work well for changing the reverse bias that is inversely proportional to the resistivity of the Si wafer. View Full-Text
Keywords: gated silicon drift detector; silicon drift detector; low-cost X-ray detector; thick X-ray detector gated silicon drift detector; silicon drift detector; low-cost X-ray detector; thick X-ray detector
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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MDPI and ACS Style

Matsuura, H.; Sakurai, S.; Oda, Y.; Fukushima, S.; Ishikawa, S.; Takeshita, A.; Hidaka, A. Gated Silicon Drift Detector Fabricated from a Low-Cost Silicon Wafer. Sensors 2015, 15, 12022-12033.

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