A CMOS Pressure Sensor Tag Chip for Passive Wireless Applications
AbstractThis paper presents a novel monolithic pressure sensor tag for passive wireless applications. The proposed pressure sensor tag is based on an ultra-high frequency RFID system. The pressure sensor element is implemented in the 0.18 µm CMOS process and the membrane gap is formed by sacrificial layer release, resulting in a sensitivity of 1.2 fF/kPa within the range from 0 to 600 kPa. A three-stage rectifier adopts a chain of auxiliary floating rectifier cells to boost the gate voltage of the switching transistors, resulting in a power conversion efficiency of 53% at the low input power of −20 dBm. The capacitive sensor interface, using phase-locked loop archietcture, employs fully-digital blocks, which results in a 7.4 bits resolution and 0.8 µW power dissipation at 0.8 V supply voltage. The proposed passive wireless pressure sensor tag costs a total 3.2 µW power dissipation. View Full-Text
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Deng, F.; He, Y.; Li, B.; Zuo, L.; Wu, X.; Fu, Z. A CMOS Pressure Sensor Tag Chip for Passive Wireless Applications. Sensors 2015, 15, 6872-6884.
Deng F, He Y, Li B, Zuo L, Wu X, Fu Z. A CMOS Pressure Sensor Tag Chip for Passive Wireless Applications. Sensors. 2015; 15(3):6872-6884.Chicago/Turabian Style
Deng, Fangming; He, Yigang; Li, Bing; Zuo, Lei; Wu, Xiang; Fu, Zhihui. 2015. "A CMOS Pressure Sensor Tag Chip for Passive Wireless Applications." Sensors 15, no. 3: 6872-6884.