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Sensors 2015, 15(2), 4253-4263; doi:10.3390/s150204253

Differential Wide Temperature Range CMOS Interface Circuit for Capacitive MEMS Pressure Sensors

Department of Electrical and Computer Engineering, McGill University, McConnell Engineering Building, 3480 University Street, Montreal, QC H3A 0E9, Canada
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Received: 13 December 2014 / Revised: 1 February 2015 / Accepted: 4 February 2015 / Published: 12 February 2015
(This article belongs to the Section Physical Sensors)
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Abstract

We describe a Complementary Metal-Oxide Semiconductor (CMOS) differential interface circuit for capacitive Micro-Electro-Mechanical Systems (MEMS) pressure sensors that is functional over a wide temperature range between −55 °C and 225 °C. The circuit is implemented using IBM 0.13 μm CMOS technology with 2.5 V power supply. A constant-gm biasing technique is used to mitigate performance degradation at high temperatures. The circuit offers the flexibility to interface with MEMS sensors with a wide range of the steady-state capacitance values from 0.5 pF to 10 pF. Simulation results show that the circuitry has excellent linearity and stability over the wide temperature range. Experimental results confirm that the temperature effects on the circuitry are small, with an overall linearity error around 2%. View Full-Text
Keywords: CMOS sensor circuits; capacitance measurement; MEMS pressure sensor; wide temperature electronics; high temperature sensors; capacitance to voltage converter CMOS sensor circuits; capacitance measurement; MEMS pressure sensor; wide temperature electronics; high temperature sensors; capacitance to voltage converter
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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MDPI and ACS Style

Wang, Y.; Chodavarapu, V.P. Differential Wide Temperature Range CMOS Interface Circuit for Capacitive MEMS Pressure Sensors. Sensors 2015, 15, 4253-4263.

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