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Sensors 2014, 14(8), 14553-14566; doi:10.3390/s140814553

An Ionizing Radiation Sensor Using a Pre-Programmed MAHAOS Device

1
Department of Opto-Electronic System Engineering, Minghsin University of Science and Technology, Xinxing Rd, 1, Xinfeng 30401, Taiwan
2
ETOMS Electronics Corp, 12, Innovation 1st. Rd, Science-Based Industrial Park, Hsin-Chu 300, Taiwan
3
Electronic Engineering Department, Southern Taiwan University of Science and Technology, 1, Nan-Tai Street, Yungkang District, Tainan 710, Taiwan
*
Author to whom correspondence should be addressed.
Received: 7 May 2014 / Revised: 14 July 2014 / Accepted: 23 July 2014 / Published: 11 August 2014
(This article belongs to the Section Physical Sensors)
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Abstract

Metal-aluminum oxide–hafnium aluminum oxide‒silicon oxide–silicon (hereafter MAHAOS) devices can be candidates for ionizing radiation sensor applications. In this work, MAHAOS devices (SONOS-like structures with high k stack gate dielectric) were studied regarding the first known characterization of the ionization radiation sensing response. The change of threshold voltage VT for a MAHAOS device after gamma ray exposure had a strong correlation to the total ionization dose (TID) of gamma radiation up to at least 5 Mrad TID. In this paper, the gamma radiation response performances of the pre-programmed and virgin (non-pre-programmed) MAHAOS devices are presented. The experimental data show that the change of VT for the pre-programmed MAHAOS device with gamma irradiation is very significant. The data of pre-programmed MAHAOS devices written by 5 Mrad TID of gamma radiation was also stable for a long time with data storage. The sensing of gamma radiation by pre-programmed MAHAOS devices with high k stack gate dielectric reported in this study has demonstrated their potential application for non-volatile ionizing radiation sensing technology in the future. View Full-Text
Keywords: high k; sensor; radiation; SONOS; SOHOS; MOS high k; sensor; radiation; SONOS; SOHOS; MOS
This is an open access article distributed under the Creative Commons Attribution License (CC BY 3.0).

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MDPI and ACS Style

Hsieh, W.-C.; Lee, H.-T.D.; Jong, F.-C. An Ionizing Radiation Sensor Using a Pre-Programmed MAHAOS Device. Sensors 2014, 14, 14553-14566.

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