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Sensors 2014, 14(4), 6722-6733; doi:10.3390/s140406722
Article

Modeling and Manufacturing of a Micromachined Magnetic Sensor Using the CMOS Process without Any Post-Process

1
, 2
 and 1,*
Received: 18 February 2014; in revised form: 31 March 2014 / Accepted: 8 April 2014 / Published: 11 April 2014
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Abstract: The modeling and fabrication of a magnetic microsensor based on a magneto-transistor were presented. The magnetic sensor is fabricated by the commercial 0.18 mm complementary metal oxide semiconductor (CMOS) process without any post-process. The finite element method (FEM) software Sentaurus TCAD is utilized to analyze the electrical properties and carriers motion path of the magneto-transistor. A readout circuit is used to amplify the voltage difference of the bases into the output voltage. Experiments show that the sensitivity of the magnetic sensor is 354 mV/T at the supply current of 4 mA.
Keywords: magnetic sensor; magneto-transistor; CMOS magnetic sensor; magneto-transistor; CMOS
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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MDPI and ACS Style

Tseng, J.-Z.; Wu, C.-C.; Dai, C.-L. Modeling and Manufacturing of a Micromachined Magnetic Sensor Using the CMOS Process without Any Post-Process. Sensors 2014, 14, 6722-6733.

AMA Style

Tseng J-Z, Wu C-C, Dai C-L. Modeling and Manufacturing of a Micromachined Magnetic Sensor Using the CMOS Process without Any Post-Process. Sensors. 2014; 14(4):6722-6733.

Chicago/Turabian Style

Tseng, Jian-Zhi; Wu, Chyan-Chyi; Dai, Ching-Liang. 2014. "Modeling and Manufacturing of a Micromachined Magnetic Sensor Using the CMOS Process without Any Post-Process." Sensors 14, no. 4: 6722-6733.



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