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Sensors 2014, 14(4), 6722-6733; doi:10.3390/s140406722
Article

Modeling and Manufacturing of a Micromachined Magnetic Sensor Using the CMOS Process without Any Post-Process

1
,
2
 and
1,*
1 Department of Mechanical Engineering, National Chung Hsing University, Taichung, 402, Taiwan 2 Department of Mechanical and Electro-Mechanical Engineering, Tamkang University, Tamsui, 251, Taiwan
* Author to whom correspondence should be addressed.
Received: 18 February 2014 / Revised: 31 March 2014 / Accepted: 8 April 2014 / Published: 11 April 2014
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Abstract

The modeling and fabrication of a magnetic microsensor based on a magneto-transistor were presented. The magnetic sensor is fabricated by the commercial 0.18 mm complementary metal oxide semiconductor (CMOS) process without any post-process. The finite element method (FEM) software Sentaurus TCAD is utilized to analyze the electrical properties and carriers motion path of the magneto-transistor. A readout circuit is used to amplify the voltage difference of the bases into the output voltage. Experiments show that the sensitivity of the magnetic sensor is 354 mV/T at the supply current of 4 mA.
Keywords: magnetic sensor; magneto-transistor; CMOS magnetic sensor; magneto-transistor; CMOS
This is an open access article distributed under the Creative Commons Attribution License (CC BY 3.0).
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Tseng, J.-Z.; Wu, C.-C.; Dai, C.-L. Modeling and Manufacturing of a Micromachined Magnetic Sensor Using the CMOS Process without Any Post-Process. Sensors 2014, 14, 6722-6733.

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