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Sensors 2012, 12(8), 11406-11434; doi:10.3390/s120811406

Development and Application of Integrated Optical Sensors for Intense E-Field Measurement

State Key Lab of Power Systems, Department of Electrical Engineering, Tsinghua University, Beijing 100084, China
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Received: 22 June 2012 / Revised: 25 July 2012 / Accepted: 31 July 2012 / Published: 21 August 2012
(This article belongs to the Special Issue Ultra-Small Sensor Systems and Components)

Abstract

The measurement of intense E-fields is a fundamental need in various research areas. Integrated optical E-field sensors (IOESs) have important advantages and are potentially suitable for intense E-field detection. This paper comprehensively reviews the development and applications of several types of IOESs over the last 30 years, including the Mach-Zehnder interferometer (MZI), coupler interferometer (CI) and common path interferometer (CPI). The features of the different types of IOESs are compared, showing that the MZI has higher sensitivity, the CI has a controllable optical bias, and the CPI has better temperature stability. More specifically, the improvement work of applying IOESs to intense E-field measurement is illustrated. Finally, typical uses of IOESs in the measurement of intense E-fields are demonstrated, including application areas such as E-fields with different frequency ranges in high-voltage engineering, simulated nuclear electromagnetic pulse in high-power electromagnetic pulses, and ion-accelerating field in high-energy physics.
Keywords: electric field; E-field sensor; Pockels effect; integrated optics electric field; E-field sensor; Pockels effect; integrated optics
This is an open access article distributed under the Creative Commons Attribution License (CC BY 3.0).

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MDPI and ACS Style

Zeng, R.; Wang, B.; Niu, B.; Yu, Z. Development and Application of Integrated Optical Sensors for Intense E-Field Measurement. Sensors 2012, 12, 11406-11434.

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