Sensors 2012, 12(5), 6369-6379; doi:10.3390/s120506369
Article

Fabrication and Characteristics of an nc-Si/c-Si Heterojunction MOSFETs Pressure Sensor

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Received: 12 March 2012; in revised form: 2 May 2012 / Accepted: 3 May 2012 / Published: 14 May 2012
(This article belongs to the Section Physical Sensors)
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
Abstract: A novel nc-Si/c-Si heterojunction MOSFETs pressure sensor is proposed in this paper, with four p-MOSFETs with nc-Si/c-Si heterojunction as source and drain. The four p-MOSFETs are designed and fabricated on a square silicon membrane by CMOS process and MEMS technology where channel resistances of the four nc-Si/c-Si heterojunction MOSFETs form a Wheatstone bridge. When the additional pressure is P, the nc-Si/c-Si heterojunction MOSFETs pressure sensor can measure this additional pressure P. The experimental results show that when the supply voltage is 3 V, length-width (L:W) ratio is 2:1, and the silicon membrane thickness is 75 μm, the full scale output voltage of the pressure sensor is 15.50 mV at room temperature, and pressure sensitivity is 0.097 mV/kPa. When the supply voltage and L:W ratio are the same as the above, and the silicon membrane thickness is 45 μm, the full scale output voltage is 43.05 mV, and pressure sensitivity is 2.153 mV/kPa. Therefore, the sensor has higher sensitivity and good temperature characteristics compared to the traditional piezoresistive pressure sensor.
Keywords: nc-Si/c-Si heterojunction; MOSFETs pressure sensor; MEMS technology; CMOS process
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MDPI and ACS Style

Zhao, X.; Wen, D.; Li, G. Fabrication and Characteristics of an nc-Si/c-Si Heterojunction MOSFETs Pressure Sensor. Sensors 2012, 12, 6369-6379.

AMA Style

Zhao X, Wen D, Li G. Fabrication and Characteristics of an nc-Si/c-Si Heterojunction MOSFETs Pressure Sensor. Sensors. 2012; 12(5):6369-6379.

Chicago/Turabian Style

Zhao, Xiaofeng; Wen, Dianzhong; Li, Gang. 2012. "Fabrication and Characteristics of an nc-Si/c-Si Heterojunction MOSFETs Pressure Sensor." Sensors 12, no. 5: 6369-6379.

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