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Sensors 2012, 12(5), 6369-6379; https://doi.org/10.3390/s120506369

Fabrication and Characteristics of an nc-Si/c-Si Heterojunction MOSFETs Pressure Sensor

Key Laboratory of Electronics Engineering, College of Heilongjiang Province, Major Laboratories of Integrated Circuits, Heilongjiang University, Harbin 150080, China
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Received: 12 March 2012 / Revised: 2 May 2012 / Accepted: 3 May 2012 / Published: 14 May 2012
(This article belongs to the Section Physical Sensors)
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Abstract

A novel nc-Si/c-Si heterojunction MOSFETs pressure sensor is proposed in this paper, with four p-MOSFETs with nc-Si/c-Si heterojunction as source and drain. The four p-MOSFETs are designed and fabricated on a square silicon membrane by CMOS process and MEMS technology where channel resistances of the four nc-Si/c-Si heterojunction MOSFETs form a Wheatstone bridge. When the additional pressure is P, the nc-Si/c-Si heterojunction MOSFETs pressure sensor can measure this additional pressure P. The experimental results show that when the supply voltage is 3 V, length-width (L:W) ratio is 2:1, and the silicon membrane thickness is 75 μm, the full scale output voltage of the pressure sensor is 15.50 mV at room temperature, and pressure sensitivity is 0.097 mV/kPa. When the supply voltage and L:W ratio are the same as the above, and the silicon membrane thickness is 45 μm, the full scale output voltage is 43.05 mV, and pressure sensitivity is 2.153 mV/kPa. Therefore, the sensor has higher sensitivity and good temperature characteristics compared to the traditional piezoresistive pressure sensor. View Full-Text
Keywords: nc-Si/c-Si heterojunction; MOSFETs pressure sensor; MEMS technology; CMOS process nc-Si/c-Si heterojunction; MOSFETs pressure sensor; MEMS technology; CMOS process
This is an open access article distributed under the Creative Commons Attribution License (CC BY 3.0).
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Zhao, X.; Wen, D.; Li, G. Fabrication and Characteristics of an nc-Si/c-Si Heterojunction MOSFETs Pressure Sensor. Sensors 2012, 12, 6369-6379.

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