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Sensors 2012, 12(4), 3952-3963; doi:10.3390/s120403952

A CMOS-Compatible Poly-Si Nanowire Device with Hybrid Sensor/Memory Characteristics for System-on-Chip Applications

National Nano Device Laboratories, No. 26, Prosperity Road 1, Hsinchu Science Park, Hsinchu 300, Taiwan
Institute of Electronics, National Chiao Tung University, Hsin-Chu 300, Taiwan
Graduate Institute of Biomedical Sciences, Chang Gung University, Taoyuan 333, Taiwan
Author to whom correspondence should be addressed.
Received: 13 January 2012 / Revised: 20 February 2012 / Accepted: 22 March 2012 / Published: 26 March 2012
(This article belongs to the Special Issue Sensing at the Nano-Scale: Chemical and Bio-Sensing)
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This paper reports a versatile nano-sensor technology using “top-down” poly-silicon nanowire field-effect transistors (FETs) in the conventional Complementary Metal-Oxide Semiconductor (CMOS)-compatible semiconductor process. The nanowire manufacturing technique reduced nanowire width scaling to 50 nm without use of extra lithography equipment, and exhibited superior device uniformity. These n type polysilicon nanowire FETs have positive pH sensitivity (100 mV/pH) and sensitive deoxyribonucleic acid (DNA) detection ability (100 pM) at normal system operation voltages. Specially designed oxide-nitride-oxide buried oxide nanowire realizes an electrically Vth-adjustable sensor to compensate device variation. These nanowire FETs also enable non-volatile memory application for a large and steady Vth adjustment window (>2 V Programming/Erasing window). The CMOS-compatible manufacturing technique of polysilicon nanowire FETs offers a possible solution for commercial System-on-Chip biosensor application, which enables portable physiology monitoring and in situ recording. View Full-Text
Keywords: nano-sensor fabrication; nanowire FET; nonvolatile memories; semiconductive sensors nano-sensor fabrication; nanowire FET; nonvolatile memories; semiconductive sensors

This is an open access article distributed under the Creative Commons Attribution License (CC BY 3.0).

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Chen, M.-C.; Chen, H.-Y.; Lin, C.-Y.; Chien, C.-H.; Hsieh, T.-F.; Horng, J.-T.; Qiu, J.-T.; Huang, C.-C.; Ho, C.-H.; Yang, F.-L. A CMOS-Compatible Poly-Si Nanowire Device with Hybrid Sensor/Memory Characteristics for System-on-Chip Applications. Sensors 2012, 12, 3952-3963.

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